
Synthesis and optoelectronic properties of silver-doped n-type CdS nanoribbons
Chunyan WU, Li WANG, Zihan ZHANG, Xiwei ZHANG, Qiang PENG, Jiajun CAI, Yongqiang YU, Huier GUO, Jiansheng JIE
Front. Optoelectron. ›› 2011, Vol. 4 ›› Issue (2) : 161-165.
Synthesis and optoelectronic properties of silver-doped n-type CdS nanoribbons
Sliver doped n-type CdS nanoribbons (NRs) were successfully synthesized by using Ag2S as the dopant via a thermal co-evaporation method. The CdS:Ag NRs have wurtzite single-crystal structure with growth direction of [110]. Significantly, the conductivity of the CdS NRs increased ~6 orders of magnitude by silver doping. Moreover, the Ag doped CdS NRs showed much enhanced photoconductivity compared with the undoped ones, which will greatly favor the application of CdS nanostructures in high-performance nano-optoelectronic devices.
CdS nanoribbons / silver doping / nanodevices / nano-field effect transistors / photoconductivity
Fig.1 Synthesis of HABI-TPE conjugate.Reaction conditions. i, bis(pinacolato)diboron, Pd(dppf)Cl2, KOAc, in DMF at 90°C for 8 h; ii, PTC, K2CO3, Pd(PPh3)4, toluene/H2O at 90°C for 1 day; iii, benzyl, ammonium acetate, acetic acid at 90°C for 12 h; iv, K3Fe(CN)6, KOH, benzene/H2O at room temperature for 8 h |
Fig.2 Absorption properties of HABI-TPE. (a) Absorption spectra of HABI-TPE in benzene, THF and solid state PMMA film before and after UV irradiation; (b) absorbance spectrum change of HABI-TPE in solution (2.5 × 10-4 M<FootNote>M= 1 mol/L </FootNote>) at different 302 nm light irradiation time; (c) absorption spectrum change of HABI-TPE in solution (2.5 × 10-4 M) in darkness after 302 nm irradiation at different time (from top to bottom: 0 min, 5 min, 10 min, 15 min, 20 min, 30 min, 45 min, 60 min, 75 min, 90 min, 2 h, 3 h, 6 h; (d) absorbance change of HABI-TPE with 302 nm irradiation and heat fade of HABI-TPE in darkness. Inset: pictures of HABI-TPE before and after 302 nm irradiation |
Fig.3 Fluorescence properties of HABI-TPE. (a) Fluorescence spectra of HABI-TPE in THF and solid state PMMA film under excitation with 490 nm before and after UV irradiation; (b) excitation wavelength-dependent emission spectra of HABI-TPE in condensed state films; (c) change of emission wavelength versus excitation wavelength; (d) identification of excitation wavelength for photoswitching by fluorescence spectra. The change of fluorescent intensity at 550 nm of HABI-TPE in condensed state with excitation time upon excitation of different wavelength was determined |
Fig.4 Fluorescence switching of HABI-TPE. (a) Fluorescence spectra change of HABI-TPE in solid state at excitation of 450 nm with scanning time; (b) fluorescence spectra changes of HABI-TPE in solid state at excitation of 490 nm with scanning time; (c) fluorescence spectra changes of HABI-TPE in solid state upon 302 nm irradiation for 5, 10, 20, 30, 60, 120 s, excitation wavelength: 490 nm; (d) fluorescence spectra changes of HABI-TPE in solid state at excitation of 490 nm with fading time for 5, 10, 15, 30, 60, and 90 min in darkness after 302 nm irradiation for 120 s |
Fig.6 Super-resolution imaging of spin-coated HABI-TPE-loaded PMMA film. (a) Conventional fluorescent image displaying the distribution of HABI-TPE fluorophores in solid film; (b) super-resolution fluorescent image for (a); (c) and (f) expanded view of the marked regions in (a); (d) and (g) expanded super-resolution fluorescent images of the marked regions in (b), corresponding to (c) and (f); (e) and (h) expanded super-resolution fluorescent images of two pairs of vicinal HABI-TPE emitters in (d) and (g), respectively; (i) and (j) fluorescence cross-sectional profiles of two pairs of vicinal HABI-TPE emitters along the dashed lines in (e) and (h), indicating the spatial resolution of 110 and 90 nm, respectively |
[1] |
Zheng G F, Lu W, Jin S, Lieber C M. Synthesis and fabrication of high-performance n-type silicon nanowire transistors. Advanced Materials, 2004, 16(21): 1890–1893
CrossRef
Google scholar
|
[2] |
Huang Y, Duan X F, Lieber C M. Nanowires for integrated multicolor nanophotonics. Small, 2005, 1(1): 142–147
|
[3] |
Cui Y, Wei Q Q, Park H K, Lieber C M. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science, 2001, 293(5533): 1289–1292
CrossRef
Google scholar
|
[4] |
Wang J F, Gudiksen M S, Duan X F, Cui Y, Lieber C M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science, 2001, 293(5534): 1455–1457
CrossRef
Google scholar
|
[5] |
Pan Z W, Dai Z R, Wang Z L. Nanobelts of semiconducting oxides. Science, 2001, 291(5510): 1947–1949
CrossRef
Google scholar
|
[6] |
Liu Y K, Zapien J A, Geng C Y, Shan Y Y, Lee C S, Lifshitz Y, Lee S T. High-quality CdS nanoribbons with lasing cavity. Applied Physicals Letters, 2004, 85(15): 3241–3243
CrossRef
Google scholar
|
[7] |
Jie J S, Zhang W J, Jiang Y, Meng X M, Li Y Q, Lee S T. Photoconductive characteristics of single-crystal CdS nanoribbons. Nano Letters, 2006, 6(9): 1887–1892
CrossRef
Google scholar
|
[8] |
Liu Y K, Zapien J A, Shan Y Y, Geng C Y, Lee C S, Lee S T. Wavelength-controlled lasing in ZnxCd1–xS single-crystal nanoribbons. Advanced Materials, 2005, 17(11): 1372–1377
CrossRef
Google scholar
|
[9] |
Jie J S, Zhang W J, Bello I, Lee C S, Lee S T. One-dimensional II-VI nanostructures: synthesis, properties and optoelectronic applications. Nano Today, 2010, 5(4): 313–336
CrossRef
Google scholar
|
[10] |
Duan X F, Huang Y, Agarwal R, Lieber C M. Single-nanowire electrically driven lasers. Nature, 2003, 421(6920): 241–245
CrossRef
Google scholar
|
[11] |
Wu D, Jiang Y, Wang L, Li S Y, Wu B, Lan X Z, Yu Y Q, Wu C Y, Wang Z B, Jie J S. High-performance CdS:P nanoribbon field-effect transistors constructed with high-k dielectric and top-gate geometry. Applied Physics Letters, 2010, 96(12): 123118
CrossRef
Google scholar
|
[12] |
Jie J S, Zhang W J, Jiang Y, Lee S T. Transport properties of single-crystal CdS nanoribbons. Applied Physics Letters, 2006, 89(22): 223117
CrossRef
Google scholar
|
[13] |
Gao T, Li Q H, Wang T H. CdS nanobelts as photoconductors. Applied Physics Letters, 2005, 86(17): 173105
CrossRef
Google scholar
|
[14] |
George P J, Sanchez A, Nair P K, Nair M T S. Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium. Applied Physics Letters, 1995, 66(26): 3624–3626
CrossRef
Google scholar
|
[15] |
Kokaj J, Rakhshani A E. Photocurrent spectroscopy of solution-grown CdS films annealed in CdCl2 vapour. Journal of Physics D: Applied Physics, 2004, 37(14): 1970–1975
CrossRef
Google scholar
|
[16] |
Ristova M, Ristov M, Tosev P, Mitreski M. Silver doping of thin CdS films by an ion exchange process. Thin Solid Films, 1998, 315(1–2): 301–304
CrossRef
Google scholar
|
[17] |
McEvoy A J, Gratzel M. Sensitization in photochemistry and photovoltaics. Solar Energy Materials and Solar Cells, 1994, 32(3): 221–227
CrossRef
Google scholar
|
[18] |
Wang C Z,
CrossRef
Google scholar
|
[19] |
Liu S X, Qu Z P, Han X W, Sun C L. A mechanism for enhanced photocatalytic activity of silver-loaded titanium dioxide. Catalysis Today, 2004, 93–95: 877–884
CrossRef
Google scholar
|
[20] |
Jia W L, Douglas E P, Guo F G, Sun W F. Optical limiting of semiconductor nanoparticles for nanosecond laser pulses. Applied Physics Letters, 2004, 85(26): 6326–6328
CrossRef
Google scholar
|
[21] |
He Z B, Jie J S, Zhang W J, Zhang W F, Luo L B, Fan X, Yuan G D, Bello I, Lee S T. Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping. Small, 2009, 5(3): 345–350
CrossRef
Google scholar
|
[22] |
Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H, Wang D. ZnO nanowire UV photodetectors with high internal gain. Nano Letters, 2007, 7(4): 1003–1009
CrossRef
Google scholar
|
/
〈 |
|
〉 |