InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices

Abstract

In this study, we fabricated and characterized an InGaN/GaN multi-quantum-well (MQW)-based p-n junction photodetector (PD) for voltage-selective light-emitting and photo-detective applications. The photodetector exhibits a cutoff wavelength at around 460 nm which is close to its electroluminescence (EL) peak position. The rejection ratio was determined to be more than three orders of magnitude. Under zero bias, the responsivity of the device peaks at 371 nm, with a value of 0.068 A/W, corresponding to a 23% quantum efficiency. The overall responsivity gradually rises as a function of reverse bias, which is explained by the enhanced photocarrier collection efficiency.

Keywords

GaN / multi-quantum-well (MQW) / photodetector (PD) / light emitting diode (LED)

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Acknowledgements

This work was supported by the State Key Program for Basic Research of China (No. 2006CB921803), the National Natural Science Foundation of China (Grant Nos. 60825401, 60806026, and 60721063), and the Program for New Century Excellent Talents in University (No. 07-0417).

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg