Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

Abstract

The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/InGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs heterojunction bipolar transistor (HBT) process. The InP/InGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 A/W at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 2²³-1 pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10^-9 at 2.5 Gbit/s is less than -15.2 dBm.

Keywords

InP/InGaAs heterojunction bipolar transistor (HBT) / PIN / photoreceiver / opto-electronic integrated circuit (OEIC)

References

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Acknowledgements

The authors would like to thank Engineer Li Xuhui, Wei Aihui and Wang Guoquan with 13th Institute of CETC, and Prof Zhu Ninghua and Xie Liang with Institute of semiconductor, CAS, for help in the OEIC measurements. This work was supported by the National High Technology Research and Development program of China (Nos. 2001AA312040, 2002AA312040), National State Key Lab Funding (No.51432070104ZK3401) and National Key Basic Research program of China (No. 2003CB314901).

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg