AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology

Abstract

128 × 128, 128 × 160 and 256 × 256 AlGaAs/GaAs quantum well infrared photodetector (QWIP) focal plane arrays (FPA) as well as a large area test device are designed and fabricated. The device with n-doped back-illuminated AlGaAs/GaAs quantum structure is achieved by metal organic chemical vapor deposition (MOCVD) epitaxial growth and GaAs integrated circuit processing technology. The test device is valued by its dark current performance and Fourier transform infrared spectroscopy (FTIR) spectra at 77 K. Cut off wavelengths of 9 and 10.9 μm are realized by using different epitaxial structures. The blackbody detectivity D_B* is as high as 2.6 × 10⁹ cm⋅Hz^1/2⋅W^-1. The 128 × 128 FPA is flip-chip bonded on a CMOS readout integrated circuit with indium (In) bumps. The infrared thermal images of some targets under room temperature background have been successfully demonstrated at 80 K operating temperature. In addition, the methods to further improve the image quality are discussed.

Keywords

metal organic chemical vapor deposition (MOCVD) / AlGaAs/GaAs / quantum well infrared photodetector (QWIP) / infrared thermal images

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Acknowledgements

This project was supported by the Electronic Supporting Foundation (No. 41501070402).

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg