Optical properties of InN films grown by MOCVD

Abstract

By means of optical absorption, photoluminescence (PL), Raman scattering and ellipsometry, optical properties of indium nitride (InN) films grown by metal organic chemical vapor deposition (MOCVD) are investigated. Through absorption and PL measurements, it is proven that the band gap of high quality InN is 0.68 eV, which agrees with the recently reported value, 0.7 eV. By analysis of the Raman scattering spectrum, the comparatively low background concentration of electron results in a smaller band gap value. The transition energy of wurtzite InN at critical point is determined by ellipsometric spectra. In addition, the complex refractive index of InN at energy ranging from 0.65 to 4.0 eV is obtained for the first time.

Keywords

indium nitride (InN) / optical absorption / photoluminescence (PL) / ellipsometry / metal organic chemical vapor deposition (MOCVD)

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Acknowledgements

This work was supported by the Special Funds for Major State Basic Research Project 973 (No. 2006CB6049), the Hi-tech Research Project (Nos. 2006AA03A103, 2006AA03A118, 2006AA03A142), the National Nature Science Foundation of China (Grant Nos. 60776001, 60676057, 60721063) and the Research Fund for the Doctoral Program of Higher Education of China (No. 20050284004).

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg