Growth of phosphorus-doped p-type ZnO thin films
by MOCVD

YE Zhizhen, WANG Jingrui, WU Yazhen, ZHOU Xincui, CHEN Fugang, XU Weizhong, MIAO Yan, HUANG Jingyun, LÜ Jianguo, ZHU Liping, ZHAO Binghui

doi:10.1007/s12200-008-0024-2

Front. Optoelectron. ›› 2008, Vol. 1 ›› Issue (1-2) :147 -150. DOI: 10.1007/s12200-008-0024-2

Growth of phosphorus-doped p-type ZnO thin films by MOCVD

YE Zhizhen, WANG Jingrui, WU Yazhen, ZHOU Xincui, CHEN Fugang, XU Weizhong, MIAO Yan, HUANG Jingyun, LÜ Jianguo, ZHU Liping, ZHAO Binghui

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Abstract

Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O₂, and P₂O₅ powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 ?·cm, a hole concentration of 1.61 × 10¹⁸ cm^-3, and a Hall mobility of 0.838 cm²·(V·s)^-1 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films.

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YE Zhizhen, WANG Jingrui, WU Yazhen, ZHOU Xincui, CHEN Fugang, XU Weizhong, MIAO Yan, HUANG Jingyun, LÜ Jianguo, ZHU Liping, ZHAO Binghui. Growth of phosphorus-doped p-type ZnO thin films by MOCVD. Front. Optoelectron., 2008, 1(1-2): 147-150 DOI:10.1007/s12200-008-0024-2