Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Abstract

Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O₂, and P₂O₅ powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 ?·cm, a hole concentration of 1.61 × 10¹⁸ cm^-3, and a Hall mobility of 0.838 cm²·(V·s)^-1 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films.

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