Application of quantum chemical descriptors into quantitative structure-property relationship models for prediction of the photolysis half-life of PCBs in water

Yueping BAO , Qiuying HUANG , Wenlong WANG , Jiangjie XU , Fan JIANG , Chenghong FENG

Front. Environ. Sci. Eng. ›› 2011, Vol. 5 ›› Issue (4) : 505 -511.

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Front. Environ. Sci. Eng. ›› 2011, Vol. 5 ›› Issue (4) : 505 -511. DOI: 10.1007/s11783-011-0318-2
RESEARCH ARTICLE
RESEARCH ARTICLE

Application of quantum chemical descriptors into quantitative structure-property relationship models for prediction of the photolysis half-life of PCBs in water

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Abstract

Quantitative structure-property relationship (QSPR) models were developed for prediction of photolysis half-life (t1/2) of polychlorinated biphenyls (PCBs) in water under ultraviolet (UV) radiation. Quantum chemical descriptors computed by the PM3 Hamiltonian software were used as independent variables. The cross-validated Qcum2 value for the optimal QSPR model is 0.966, indicating good prediction capability for lg t1/2 values of PCBs in water. The QSPR results show that the largest negative atomic charge on a carbon atom (QC-) and the standard heat of formation (ΔHf) have a dominant effect on t1/2 values of PCBs. Higher QC- values or lower ΔHf values of the PCBs leads to higher lg t1/2 values. In addition, the lg t1/2 values of PCBs increase with the increase in the energy of the highest occupied molecular orbital values. Increasing the largest positive atomic charge on a chlorine atom and the most positive net atomic charge on a hydrogen atom in PCBs leads to the decrease of lg t1/2 values.

Keywords

photolysis / polychlorinated biphenyls (PCBs) / quantitative structure-property relationships (QSPRs) / quantum chemical descriptors

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Yueping BAO, Qiuying HUANG, Wenlong WANG, Jiangjie XU, Fan JIANG, Chenghong FENG. Application of quantum chemical descriptors into quantitative structure-property relationship models for prediction of the photolysis half-life of PCBs in water. Front. Environ. Sci. Eng., 2011, 5(4): 505-511 DOI:10.1007/s11783-011-0318-2

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