Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

Abstract

The integration of porous organo-silicate low-k materials has met a lot of technical challenges. One of the main issues is plasma-induced damage, occurring for all plasma steps involved during interconnects processing. In the present paper, we focus on porous SiOCH low-k damage mitigation using cryogenic temperature so as to enable micro-capillary condensation. The aim is to protect the porous low-k from plasma-induced damage and keep the k-value of the material unchanged, in order to limit the RC delay of interconnexion levels while shrinking the microchip dimension. The cryogenic temperature is used to condense a gas inside the porous low-k material. Then, the etching process is performed at the temperature of condensation in order to keep the condensate trapped inside the material during the etching. In the first part of this work, the condensation properties of several gases are screened, leading to a down selection of five gases. Then, their stability into the porous structure is evaluated at different temperature. Four of them are used for plasma damage mitigation comparison. Damage mitigation is effective and shows negligible damage for one of the gases at –50°C.

Key words： low-k; nanotechnology; micro-electronics; cryo-etching; plasma processing

Acknowledgements

The authors acknowledge Dr. P. Shen and K. Urabe from Air Liquide Laboratories for providing HBPO, Sumida, Mikado and Akita molecules. This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement No. 708106.

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