DFT insights into oxygen vacancy formation and chemical looping dry reforming of methane on metal-substituted CeO2 (111) surface
Mingyi Chen, Zeshan Wang, Yuelun Li, Yuxin Wang, Lei Jiang, Huicong Zuo, Linan Huang, Yuhao Wang, Dong Tian, Hua Wang, Kongzhai Li
DFT insights into oxygen vacancy formation and chemical looping dry reforming of methane on metal-substituted CeO2 (111) surface
The oxygen vacancy formation energy and chemical looping dry reforming of methane over metal-substituted CeO2 (111) are investigated based on density functional theory calculations. The calculated results indicate that among the various metals that can substitute for the Ce atom in the CeO2(111) surface, Zn substitution results in the lowest oxygen vacancy formation energy. For the activation of CH4 on CeO2 (111) and Zn-substituted CeO2 (111) surfaces, the calculated results illustrate that the dissociation process of CH3(ads) is very difficult on pristine surfaces and unfavorable for CHO(ads) on substituted surfaces. Furthermore, the dissociative adsorption of CO and H2 on the Zn-substituted CeO2 (111) surface requires high energy, which is unfavorable for syngas production. This work demonstrates that excessive formation of oxygen vacancy can lead to excessively high adsorption energies, thus limiting the conversion efficiency of the reaction intermediates. This finding provides important guidance and application prospects for the design and optimization of oxygen carrier materials, especially in the field of chemical looping dry methane reforming to syngas.
Zn-substituted / CeO2 (111) / oxygen vacancy formation / chemical looping dry reforming of methane / density functional theory
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