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Frontiers of Optoelectronics

Front. Optoelectron.    2019, Vol. 12 Issue (4) : 392-396     https://doi.org/10.1007/s12200-019-0869-6
RESEARCH ARTICLE
Near-infrared carbon-implanted waveguides in Tb3+-doped aluminum borosilicate glasses
Yue WANG1, Jiaxin ZHAO1, Qifeng ZHU1, Jianping SHEN1, Zhongyue WANG1, Haitao GUO2, Chunxiao LIU1()
1. College of Electronic and Optical Engineering, Nanjing University of Post and Telecommunications, Nanjing 210023, China
2. State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences (CAS), Xi’an 710119, China
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Abstract

Ion implantation has played a unique role in the fabrication of optical waveguide devices. Tb3+-doped aluminum borosilicate (TDAB) glass has been considered as an important magneto-optical material. In this work, near-infrared waveguides have been manufactured by the (5.5+ 6.0) MeV C3+ ion implantation with doses of (4.0+ 8.0) × 1013 ions·cm2 in the TDAB glass. The modes propagated in the TDAB glass waveguide were recorded by a prism-coupling system. The finite-difference beam propagation method (FD-BPM) was carried out to simulate the guiding characteristics of the TDAB glass waveguide. The TDAB glass waveguide allows the light propagation with a single-mode at 1.539 mm and can serve as a potential candidate for future waveguide isolators.

Keywords Tb3+-doped aluminum borosilicate (TDAB) glass      optical waveguide      ion implantation     
Corresponding Authors: Chunxiao LIU   
Online First Date: 06 May 2019    Issue Date: 30 December 2019
 Cite this article:   
Yue WANG,Jiaxin ZHAO,Qifeng ZHU, et al. Near-infrared carbon-implanted waveguides in Tb3+-doped aluminum borosilicate glasses[J]. Front. Optoelectron., 2019, 12(4): 392-396.
 URL:  
http://journal.hep.com.cn/foe/EN/10.1007/s12200-019-0869-6
http://journal.hep.com.cn/foe/EN/Y2019/V12/I4/392
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Yue WANG
Jiaxin ZHAO
Qifeng ZHU
Jianping SHEN
Zhongyue WANG
Haitao GUO
Chunxiao LIU
Fig.1  Schematic of a waveguide formation by an ion implantation method. The inset is the photograph of the polished TDAB glass
Fig.2  Schematic of the set-up for the prism coupling method
Fig.3  Vacancy distribution versus the implantation depth for (5.5+ 6.0) MeV C3+ ions implanted into the TDAB glass
Fig.4  Relative light intensity versus effective RI for the double-energy carbon ion implanted TDAB glass and the inset is the RI of the unimplanted TDAB glass
Fig.5  Simulated guided mode intensity profile for the double-energy carbon ion implanted TDAB glass waveguide
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