Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Abstract

Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

Keywords

optical communication / separate absorption / grading / charge / and multiplication avalanche photodiode (SAGCM APD) / dead space effect / temperature coefficient

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Acknowledgements

This work was supported by the National Hi-Tech Research and Development Program of China (No. 2008AA1Z207), Natural Science Foundation of Hubei Province, China (No. 2010CDB01606), Fundamental Research Funds for the Central Universities (HUST: 2016YXMS027), Huawei Innovation Research Program (Nos. YJCB2010032NW, YB2012120133, YB2014010026 and YB2016040002), and Scientific Research Foundation for the Returned Overseas Chinese Scholars.

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