Longitudinal twinning α-In₂Se₃ nanowires for UV-visible-NIR photodetectors with high sensitivity

Abstract

Longitudinal twinning α-In₂Se₃ nanowires with the (10\overline{\mathrm{1}}8) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In₂Se₃ nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm²·V⁻¹·S⁻¹ and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 × 10⁵ A·W⁻¹, high external quantum efficiency up to 8.8 × 10⁷% and a high detectivity of 1.58 × 10¹² Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In₂Se₃ nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In₂Se₃ nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.

Keywords

photodetectors / nanowires / twinning / ultraviolet-visible-near-infrared (UV-visible-NIR)

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (NSFC) (Grant Nos. 61625404, 61574132), and the Key Research Program of Frontier Sciences, CAS (No. QYZDY-SSW-JWC004).

Author contributions

Z. D. Zhang and J. H. Yang performed the experiments; all authors contributed to the general discussion and have given approval to the final version of the paper.

Conflict of interest

The authors declare that they have no conflict of interest.

Supporting Information

TEM, XPS data of In₂Se₃-based twinning nanowires and the photoresponse data of the In₂Se₃-based photodetectors are shown in Figs. S1−S5.

Figs. S1 (a) Full scale XPS scan, (b) in peaks, and (c) Se 3d doublets of the synthesized α-In₂Se₃ nanowires

Figs. S2 (a) TEM image, and (b) SAED pattern of the synthesized twinned α-In₂Se₃ nanowires

Figs. S3 Key device figures-of-merit, EQE and specific detectivity of the devices measured at different power intensities of 600 nm light illumination at a 3 V bias

Figs. S4I-V curves of the device illuminated with incident light of various wavelengths and in the dark, respectively

Figs. S5 (a) Time-resolved photoresponse characteristics of the device at a bias of 1 V in 300 nm with different light intensities. (b) Photocurrent and responsivity as a function of light power intensity in 300 nm. The fitting result is I_ph~P^0.97. (c) Time-resolved photoresponse characteristics of the device at a bias of 3 V in 800 nm with different light intensities. (d) Photocurrent and responsivity as a function of light power intensity in 300 nm. The fitting result is I_ph~P^0.94

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