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Frontiers of Optoelectronics

Front. Optoelectron.    2018, Vol. 11 Issue (3) : 245-255
Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity
Zidong ZHANG1,2, Juehan YANG1, Fuhong MEI2, Guozhen SHEN1,3()
1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China
3. College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100029, China
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Longitudinal twinning α-In2Se3 nanowires with the (101¯8) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2·V1·S1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 × 105 A·W1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 × 1012 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.

Keywords photodetectors      nanowires      twinning      ultraviolet-visible-near-infrared (UV-visible-NIR)     
Corresponding Authors: Guozhen SHEN   
Just Accepted Date: 18 May 2018   Online First Date: 27 June 2018    Issue Date: 31 August 2018
 Cite this article:   
Zidong ZHANG,Juehan YANG,Fuhong MEI, et al. Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity[J]. Front. Optoelectron., 2018, 11(3): 245-255.
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Zidong ZHANG
Juehan YANG
Fuhong MEI
Guozhen SHEN
Fig.1  (a) and (b) SEM images; (c) XRD pattern; (d) elemental mapping; (e) EDS spectrum; (f) TEM image; (g) and (h) HRTEM images; and (i) SAED pattern of the as-synthesized In2Se3 nanowires (NWs)
Fig.2  (a) Output curves of single In2Se3-basedtwinning nanowire FET; (b) transfer curve of single In2Se3-based twinning nanowire FET at a bias of 5 V
Fig.3  (a) Schematic illustration of the single nanowire photodetector. (b) I-V curves of the device in the dark and under illumination with light of different wavelengths. (c) I-V curves of the device under 600 nm light illumination with different power intensities. (d) Photocurrent and responsivity as a function of light power intensity. The fitting result is Iph ~P0.99. (e) Time-resolved photoresponse of the device recorded for a power density of 8.19 mW·cm−2. (f) Response and recovery times of the device
Fig.4  (a) Photoresponse characteristics and (b) responsivity (left) and EQE (right) of the device to light illuminations with different wavelengths ranging from UV to NIR regions at a bias of 1 V
Fig.5  Time-resolved photoresponse performance of the In2Se3 nanowires device illuminated under (a) 300 nm, (b) 400 nm, (c) 500 nm, (d) 700 nm, (e) 800 nm, and (f) 900 nm by switching the light on and off at a bias of 1 V, respectively. (g) Photoresponse times under various excitation wavelengths
photodetectors measurement condition Iph/A spectral range/nm responsivity/(A·W1) detectivity(D*)/Jones source
a-In2Se3 NWs 500 nm, 3 V 200 p 89 [15]
g-In2Se3 microwires 633 nm, 4 V 8 n 365−1050 0.54 3.94 × 1010 [20]
S-doped In2Se3 NWs 500 nm, 3 V 130 n 1331 [45]
In2Se3 nanosheets 500 nm, 5 V 20 p 300−1100 59 3.37 × 1011 [46]
a-In2Se3 twinning NWs 600 nm,3 V 165 n 300−1100 4.18 × 105 1.58 × 1012 this work
Tab.1  Comparison of the key device performance figures-of-merit for the reported In2Se3-nanostructures based photodetectors
  Figs. S1 (a) Full scale XPS scan, (b) in peaks, and (c) Se 3d doublets of the synthesized α-In2Se3 nanowires
  Figs. S2 (a) TEM image, and (b) SAED pattern of the synthesized twinned α-In2Se3 nanowires
  Figs. S3 Key device figures-of-merit, EQE and specific detectivity of the devices measured at different power intensities of 600 nm light illumination at a 3 V bias
  Figs. S4I-V curves of the device illuminated with incident light of various wavelengths and in the dark, respectively
  Figs. S5 (a) Time-resolved photoresponse characteristics of the device at a bias of 1 V in 300 nm with different light intensities. (b) Photocurrent and responsivity as a function of light power intensity in 300 nm. The fitting result is Iph~P0.97. (c) Time-resolved photoresponse characteristics of the device at a bias of 3 V in 800 nm with different light intensities. (d) Photocurrent and responsivity as a function of light power intensity in 300 nm. The fitting result is Iph~P0.94
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