Structural, optical and electrical properties of ZnO: B thin films with different thickness for bifacial a-Si:H/c-Si heterojunction solar cells

Abstract

Textured surface boron-doped zinc oxide (BZO) thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide (TCO) for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scanning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96×10³ to 6.94×10³ S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n⁺-type a-Si:H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open-circuit voltage was 0.63 V and the short-circuit density was 41.79 mA/cm². The properties of the solar cells changing with the thickness were also investigated.

Keywords

boron-doped zinc oxide (BZO) / metal organic chemical vapor deposition (MOCVD) / heterojunction solar cell / thickness / textured surface / transparent conductive oxide (TCO)

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 51472096) and the Supporting Technology Project of Education of China (No. 62501040202). The authors would like to thank all members of the thin film group at the Photonic and Information System Integration Institute for their support of this work and helpful discussion. The authors also thank Analytical and Testing Center of Huazhong University of Science & Technology for SEM measurement and Optoelectronic Micro/nano Fabrication Faculty of Wuhan National Laboratory for XRD and optical measurements and analysis of samples for their valuable suggestions and help for the samples characterizations

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