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Frontiers of Optoelectronics

Front Optoelec    2014, Vol. 7 Issue (1) : 37-45     DOI: 10.1007/s12200-014-0389-3
RESEARCH ARTICLE |
Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices
Jun HAN1, Ying ZHOU2, Yang Tian3, Ziheng HUANG4, Xiaohua WANG1(), Jie ZHONG2, Zhe XIA2, Bo YANG2, Haisheng SONG2, Jiang TANG2()
1. School of Science, Changchun University of Science and Technology, Changchun 130022, China; 2. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan 430074, China; 3. Department of Environmental Science, College of Environmental Sciences, Minzu University of China, Beijing 100081, China; 4. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Abstract

Copper tin sulfide (Cu2SnS3) was a potential earth abundant absorber material for photovoltaic device application. In this contribution, triclinic Cu2SnS3 film with phase pure composition and large grain size was fabricated from a hydrazine solution process using Cu, Sn and S as the precursors. Absorption measurement revealed this Cu2SnS3 film had a direct optical band gap of 0.88 eV, and Hall effect measurement indicated the film was p-type with hole mobility of 0.86 cm2/Vs. Finally Mo/Cu2SnS3/CdS/ZnO/AZO/Au was produced and the best device efficiency achieved was 0.78%. Also, this device showed improved device performance during ambient storage. This study laid some foundation for the further improvement of Cu2SnS3 solar cell.

Keywords copper tin sulfide (Cu2SnS3)      solar cell      hydrazine      solution process      triclinic     
Corresponding Authors: WANG Xiaohua,Email:jtang@mail.hust.edu.cn; TANG Jiang,Email:biewang2001@126.com   
Issue Date: 05 March 2014
 Cite this article:   
Jun HAN,Ziheng HUANG,Xiaohua WANG, et al. Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices[J]. Front Optoelec, 2014, 7(1): 37-45.
 URL:  
http://journal.hep.com.cn/foe/EN/10.1007/s12200-014-0389-3
http://journal.hep.com.cn/foe/EN/Y2014/V7/I1/37
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Jun HAN
Ziheng HUANG
Xiaohua WANG
Jie ZHONG
Zhe XIA
Bo YANG
Haisheng SONG
Jiang TANG
Ying ZHOU
Yang Tian
Fig.1  CuSnS solution preparation and film fabrication. (a) Digital images of Cu-S, Sn-S and Cu-Sn-S hydrazine solution; (b) TGA curve of Cu-Sn-S precursor powder (dried inside glovebox) measured in N atmosphere; (c) flowing chart of CuSnS film fabrication procedure
Fig.2  Top-view SEM images of CuSnS film annealed at different temperature for 10 min. (a) and (e) 450°C; (b) and (f) 500°C; (c) and (g) 550°C; (d) and (h) 600°C. Sulfur addition was kept as 5 mg for all samples
Fig.3  Top-view and cross-sectional SEM images of CuSnS film annealed at 600 °C with different amount of sulfur addition. (a) and (d) 0 mg; (b) and (e) 1 mg; (c) and (f) 10 mg
Fig.4  Characterization of CuSnS film. (a) XRD pattern of CuSnS film on Mo substrate. The major diffraction peaks of (2,1,1), (2,0,10) and (3,2,10) and the standard triclinic CuSnS diffraction peaks (JCPDS 027-0198) were included; (b) Raman spectrum of CuSnS film with the position of 4 peaks included; (c) absorption spectrum and corresponding () vs. () fitting to extract the optical band gap of CuSnS film
Fig.5  XPS spectra of Cu, Sn and S element in CuSnS film. (a) Cu; (b) Sn. (c) S. Black curves were original data and pink and green curves were Gaussian-Lorentzian fitting curves
Fig.6  Solar cell configuration, performance and stability. (a) Schematic demonstration of the device configuration of CuSnS solar cell; (b) dark and light curves of CuSnS solar cell. Light was simulated AM1.5G irradiation at an intensity of 100 mW/cm; (c) efficiency evolution of three representative unencapsulated devices A, B, C when stored in lab environment for 0, 40, 55 and 80 days; (d) comparison of device characteristics , , and between fresh (0 day storage) and aged (80 days ambient storage) of CuSnS photovoltaic device B
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