Programmable van der Waals Heterojunction for Multifunctional Integration

An Gui , Yutao Song , Tong Li , Kaiwen Gong , Haozhe Li , Haoran Mu , Rong Yang , Lei Liao , Guangyu Zhang , Shenghuang Lin

SmartMat ›› 2026, Vol. 7 ›› Issue (4) : e70096

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SmartMat ›› 2026, Vol. 7 ›› Issue (4) :e70096 DOI: 10.1002/smm2.70096
RESEARCH ARTICLE
Programmable van der Waals Heterojunction for Multifunctional Integration
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Abstract

Machine vision systems in real-world applications require devices capable of adapting to multiple operational modes, including high-sensitivity photodetection, neuromorphic synaptic behavior, and optical memory. However, integrating these distinct optoelectronic functionalities into a single device presents a challenge due to their conflicting requirements for photoresponse time and retention. Here, a gate-programmable multifunctional transistor based on a MoS2/MAPbBr3 van der Waals (vdW) heterostructure is fabricated. By using the gate field to tune the interfacial electric field and trapping/release kinetics associated with shallow- and deep-level states, the device can be programmed to operate as a photodetector, synaptic transistor, and gate-bias-assisted multilevel optical memory. Under a positive gate voltage (VG), a pronounced photogating effect enables photodetection with responsivity (R) of ∼2397 A/W. At VG = –20 V, the device switches to synaptic mode. At a more negative gate bias, the device enters a gate-bias-assisted optical-memory mode under sustained gate bias. To illustrate the utility of this programmable multifunctionality, frequency-encoded image recognition is demonstrated with 96.4% accuracy. In addition, a device-enabled reservoir-computing (RC) scheme with software-assisted readout improves classification accuracy by ~20% through deep delay-based processing. This work demonstrates a multimodal transistor architecture that integrates multiple optoelectronic functions in a single device and suggests a compact hardware route toward adaptive in-sensor optical information processing.

Keywords

memories / multifunctional / photodetectors / reservoir computing / synapses

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An Gui, Yutao Song, Tong Li, Kaiwen Gong, Haozhe Li, Haoran Mu, Rong Yang, Lei Liao, Guangyu Zhang, Shenghuang Lin. Programmable van der Waals Heterojunction for Multifunctional Integration. SmartMat, 2026, 7 (4) : e70096 DOI:10.1002/smm2.70096

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References

[1]

Q. Lin, Y. Zhu, X. Hu, et al., “Multifunctional PN Optoelectronic Synapse and Its Smart Integration Towards Augmented Artificial Visual System,” npj Flexible Electronics 9, no. 1 (2025): 81.

[2]

S. Zhou, C. Gao, T. Delbruck, M. Verhelst, and S. C. Liu, “Exploiting Neuro-Inspired Dynamic Sparsity for Energy-Efficient Intelligent Perception,” Nature Communications 16, no. 1 (2025): 9928.

[3]

Q. B. Zhu, B. Li, D. D. Yang, et al., “A Flexible Ultrasensitive Optoelectronic Sensor Array for Neuromorphic Vision Systems,” Nature Communications 12, no. 1 (2021): 1798.

[4]

K. Wang, S. Ren, Y. Jia, X. Yan, L. Wang, and Y. Fan, “MXene-Ti3C2TX-Based Neuromorphic Computing: Physical Mechanisms, Performance Enhancement, and Cutting-Edge Computing,” Nano-Micro Letters 17, no. 1 (2025): 273.

[5]

J. Xu, B. Jiang, W. Wang, et al., “High-Order Dynamics in an Ultra-Adaptive Neuromorphic Vision Device,” Nature Nanotechnology 20, no. 10 (2025): 1419–1430.

[6]

R. L. Rademaker, C. Chunharas, and J. T. Serences, “Coexisting Representations of Sensory and Mnemonic Information in Human Visual Cortex,” Nature Neuroscience 22, no. 8 (2019): 1336–1344.

[7]

E. Baek, S. Song, C. K. Baek, Z. Rong, L. Shi, and C. V. Cannistraci, “Neuromorphic Dendritic Network Computation With Silent Synapses for Visual Motion Perception,” Nature Electronics 7, no. 6 (2024): 454–465.

[8]

S. Wang, S. Gao, C. Tang, et al., “Memristor-Based Adaptive Neuromorphic Perception in Unstructured Environments,” Nature Communications 15, no. 1 (2024): 4671.

[9]

A. Steel, E. H. Silson, B. D. Garcia, and C. E. Robertson, “A Retinotopic Code Structures the Interaction Between Perception and Memory Systems,” Nature Neuroscience 27, no. 2 (2024): 339–347.

[10]

Z. Yang, T. Wang, Y. Lin, et al., “A Vision Chip With Complementary Pathways for Open-World Sensing,” Nature 629, no. 8014 (2024): 1027–1033.

[11]

D. Gehrig and D. Scaramuzza, “Low-Latency Automotive Vision With Event Cameras,” Nature 629, no. 8014 (2024): 1034–1040.

[12]

Z. Wang, S. Joshi, S. E. Savel'ev, et al., “Memristors With Diffusive Dynamics as Synaptic Emulators for Neuromorphic Computing,” Nature Materials 16, no. 1 (2017): 101–108.

[13]

D. Kudithipudi, C. Schuman, C. M. Vineyard, et al., “Neuromorphic Computing at Scale,” Nature 637, no. 8047 (2025): 801–812.

[14]

W. Haensch, A. Raghunathan, K. Roy, et al., “Compute In-Memory With Non-Volatile Elements for Neural Networks: A Review From A Co-Design Perspective,” Advanced Materials 35, no. 37 (2023): e2204944.

[15]

Y. Liu, Y. Zhang, J. Wang, et al., “Ultrahigh Capacitive Energy Storage Through Dendritic Nanopolar Design,” Science 388, no. 6743 (2025): 211–216.

[16]

T. Zhao, W. Yue, Q. Deng, et al., “Neuromorphic Transistors Integrating Photo-Sensor, Optical Memory and Visual Synapses for Artificial Vision Application,” Advanced Materials 37, no. 27 (2025): e2419208.

[17]

D. Cui, M. Pei, Z. Lin, et al., “Versatile Optoelectronic Memristor Based on Wide-Bandgap Ga2O3 for Artificial Synapses and Neuromorphic Computing,” Light: Science & Applications 14, no. 1 (2025): 161.

[18]

K. Liu, T. Zhu, Y. Tang, et al., “Dual-Mode Switching of Photodetection and Neuromorphic Photoelectric Memory in VS-Res2/WSe2 Heterostructure via Vacancy and Electric Field Synergetic Regulation,” Advanced Functional Materials 35, no. 50 (2025): e09982.

[19]

Y. Chen, Z. Wang, J. Du, C. Si, C. Jiang, and S. Yang, “Wrinkled Rhenium Disulfide for Anisotropic Nonvolatile Memory and Multiple Artificial Neuromorphic Synapses,” ACS Nano 18, no. 44 (2024): 30871–30883.

[20]

S. Chen, Z. Lou, D. Chen, and G. Shen, “An Artificial Flexible Visual Memory System Based on an UV-Motivated Memristor,” Advanced Materials 30, no. 7 (2018): 1705400.

[21]

Y. Ouyang, C. Zhang, J. Wang, Z. Guo, Z. Wang, and M. Dong, “Gate-Tunable Dual-Mode Optoelectronic Device for Self-Powered Photodetector and Optoelectronic Synapse,” Advanced Science 12, no. 17 (2025): 2416259.

[22]

H. Wu, Z. Kang, Z. Zhang, et al., “Interfacial Charge Behavior Modulation in Perovskite Quantum Dot-Monolayer MoS2 0D-2D Mixed-Dimensional Van Der Waals Heterostructures,” Advanced Functional Materials 28, no. 34 (2018): 1802015.

[23]

H. Wu, H. Si, Z. Zhang, et al., “All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional Van Der Waals Heterostructure for Ultrasensitive Photodetector,” Advanced Science 5, no. 12 (2018): 1801219.

[24]

Z. Xu, Y. Zeng, F. Meng, et al., “A High-Performance Self-Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film MoS2 Vertical Van Der Waals Heterostructure,” Advanced Materials Interfaces 9, no. 27 (2022): 2200912.

[25]

F. Meng, Z. Xu, Y. Zeng, et al., “Photodetectors Based on MoS2/MAPbBr3 Van Der Waals Heterojunction,” IEEE Electron Device Letters 43, no. 3 (2022): 414–417.

[26]

J. Sim, S. Ryoo, J. S. Kim, et al., “Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS2 Phototransistor,” ACS Nano 18, no. 26 (2024): 16905–16913.

[27]

M. Feng, J. Byun, Z. Li, et al., “Overcoming Size Limits With Dynamic Templates Enabling Large Area Single Crystal Nanowire Arrays for Photodetectors,” Nature Communications 16, no. 1 (2025): 9891.

[28]

M. García-Batlle, J. Mayén Guillén, M. Chapran, et al., “Coupling Between Ion Drift and Kinetics of Electronic Current Transients in MAPbBr3 Single Crystals,” ACS Energy Letters 7, no. 3 (2022): 946–951.

[29]

W. Liu, D. Sarkar, J. Kang, W. Cao, and K. Banerjee, “Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors,” ACS Nano 9, no. 8 (2015): 7904–7912.

[30]

W. Zhang, B. Liang, J. Tang, et al., “Performance Limit of All-Wrapped Monolayer MoS2 Transistors,” Science Bulletin 68, no. 18 (2023): 2025–2032.

[31]

Q. Gao, Z. Zhang, X. Xu, J. Song, X. Li, and Y. Wu, “Scalable High Performance Radio Frequency Electronics Based on Large Domain Bilayer MoS2,” Nature Communications 9, no. 1 (2018): 4778.

[32]

Y. Lu, Z. Zhan, J. Tan, et al., “High-Performance MoS2 Homojunction Photodiode Enabled by Facile Van Der Waals Contacts With 2D Perovskite,” Laser & Photonics Reviews 18, no. 3 (2023): 2300941.

[33]

K. R. Sahoo, M. Talluri, D. Maity, et al., “Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer,” Advanced Functional Materials 35, no. 37 (2025): 2502408.

[34]

Y. Meng, T. Wang, C. Jin, et al., “Electrical Switching Between Exciton Dissociation to Exciton Funneling in MoSe2/WS2 Heterostructure,” Nature Communications 11, no. 1 (2020): 2640.

[35]

L. Mei, K. Zhang, N. Cui, et al., “Ultraviolet-Visible-Short-Wavelength Infrared Broadband and Fast-Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate,” Small (Weinheim an der Bergstrasse, Germany) 19, no. 37 (2023): e2301386.

[36]

M. Ramos, F. Marques-Moros, D. L. Esteras, et al., “Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 Van Der Waals Heterostructures,” ACS Applied Materials & Interfaces 14, no. 29 (2022): 33482–33490.

[37]

L. Mei, W. Yu, N. Cui, et al., “High-Performance Single-Microplate Perovskite Photodetectors Based on Polyvinyl Alcohol Filled Planar Electrodes for Weak-Light Imaging and Pixel Integration,” Advanced Functional Materials 34, no. 52 (2024): 2410575.

[38]

M. Sup Choi, G. H. Lee, Y. J. Yu, et al., “Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices,” Nature Communications 4, no. 1 (2013): 1624.

[39]

Z. Ni, L. Zhao, Z. Shi, et al., “Identification and Suppression of Point Defects in Bromide Perovskite Single Crystals Enabling Gamma-Ray Spectroscopy,” Advanced Materials 36, no. 35 (2024): e2406193.

[40]

C. P. Lu, G. Li, J. Mao, L. M. Wang, and E. Y. Andrei, “Bandgap, Mid-Gap States, and Gating Effects in MoS2,” Nano Letters 14, no. 8 (2014): 4628–4633.

[41]

L. Wang, F. Gao, A. Wang, et al., “Defect-Rich Adhesive Molybdenum Disulfide/rGO Vertical Heterostructures With Enhanced Nanozyme Activity for Smart Bacterial Killing Application,” Advanced Materials 32, no. 48 (2020): e2005423.

[42]

J. -H. Ahn, “Direct Synthesis of MoS2 Films on Flexible Substrates at Low Temperature,” Nature Nanotechnology 18, no. 12 (2023): 1381–1382.

[43]

Y. Zhou, H. Zhang, Y. Xian, et al., “Enhancing Charge-Emitting Shallow Traps in Metal Halide Perovskites by >100 Times by Surface Strain,” Joule 9, no. 1 (2025): 101772.

[44]

J. Hüpkes, U. Rau, and T. Kirchartz, “Impact of Trap Depth on the Steady-State and Transient Photoluminescence in Halide Perovskite Films,” Advanced Energy Materials 15, no. 47 (2025): e03157.

[45]

J. Ge, Y. Chen, Y. Zhao, Y. Wang, F. Zhang, and X. Lei, “Activated MoS2 by Constructing Single Atomic Cation Vacancies for Accelerated Hydrogen Evolution Reaction,” ACS Applied Materials & Interfaces 14, no. 23 (2022): 26846–26857.

[46]

L. Zhang, Y. Wang, A. Chu, et al., “Facet-Selective Growth of Halide Perovskite/2D Semiconductor Van Der Waals Heterostructures for Improved Optical Gain and Lasing,” Nature Communications 15, no. 1 (2024): 5484.

[47]

D. Liu, J. Wu, Y. B. Lu, et al., “3D Digital Holography Investigations of Giant Photostriction Effect in MAPbBr3 Perovskite Single Crystals,” Advanced Functional Materials 34, no. 44 (2024): 2404995.

[48]

C. Xu, Y. Mao, C. Chen, et al., “Proximity Doping in Monolayer MoS2: Multimodal Insights into Optical Modulation and Ultrafast Carrier Dynamic,” Laser & Photonics Reviews 19, no. 19 (2025): e00682.

[49]

S. P. Senanayak, K. Dey, R. Shivanna, et al., “Charge Transport in Mixed Metal Halide Perovskite Semiconductors,” Nature Materials 22, no. 2 (2023): 216–224.

[50]

J. W. Rosenberg, M. J. Legodi, Y. Rakita, D. Cahen, and M. Diale, “Laplace Current Deep Level Transient Spectroscopy Measurements of Defect States in Methylammonium Lead Bromide Single Crystals,” Journal of Applied Physics 122, no. 14 (2017): 145701.

[51]

C. Guo, J. Guo, W. Song, et al., “Atomic Heterointerface Engineering and Nonequilibrium Carrier Dynamics for Enhanced Photocatalysis in Halide Perovskite/MoS2 Systems,” Angewandte Chemie International Edition 64, no. 31 (2025): e202506436.

[52]

H. Fang and W. Hu, “Photogating in Low Dimensional Photodetectors,” Advanced Science 4, no. 12 (2017): 1700323.

[53]

R. Duan, W. Qi, P. Li, K. Tang, G. Ru, and W. Liu, “A High-Performance MoS2-Based Visible-Near-Infrared Photodetector From Gateless Photogating Effect Induced by Nickel Nanoparticles,” Research 6, no. 16 (2023): 0195.

[54]

Z. Cai, M. Cao, Z. Jin, K. Yi, X. Chen, and D. Wei, “Large Photoelectric-Gating Effect of Two-Dimensional Van-Der-Waals Organic/Tungsten Diselenide Heterointerface,” npj 2D Materials and Applications 2, no. 1 (2018): 21.

[55]

Y. Wang, Z. Lai, S. Tang, et al., “ReS2/MoSe2 Van Der Waals Heterostructure Photodetectors for Polarization Imaging and Polarization-Encoded Optical Communication,” Small (Weinheim an der Bergstrasse, Germany) 21, no. 34 (2025): e2503599.

[56]

K. Chen, X. Zhao, A. Mesli, Y. He, and Y. Dan, “Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements,” ACS Nano 12, no. 4 (2018): 3436–3441.

[57]

Y. Z. Kang, G. H. An, M. G. Jeon, et al., “Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping,” Nano Letters 23, no. 19 (2023): 8914–8922.

[58]

C. Han, X. Han, J. Han, et al., “Light-Stimulated Synaptic Transistor With High PPF Feature for Artificial Visual Perception System Application,” Advanced Functional Materials 32, no. 22 (2022): 2113053.

[59]

F. Nie, H. Fang, J. Wang, et al., “An Adaptive Solid-State Synapse With Bi-Directional Relaxation for Multimodal Recognition and Spatio-Temporal Learning,” Advanced Materials 37, no. 17 (2025): 2412006.

[60]

K. Dewa, K. Kaseda, A. Kuwahara, et al., “The Astrocytic Ensemble Acts as a Multiday Trace to Stabilize Memory,” Nature 648, no. 8092 (2025): 146–156.

[61]

J. Park and W. S. Chung, “How Astrocytes Regulate Microglia in CNA Injury: BST2-high Astrocytes at the Border,” Neuron 114, no. 2 (2026): 1–3.

[62]

J. Xing, C. Zhao, Y. Zou, et al., “Modulating the Optical and Electrical Properties of MAPbBr3 Single Crystals via Voltage Regulation Engineering and Application in Memristors,” Light, Science & Applications 9, no. 1 (2020): 111.

[63]

Z. Guo, J. Liu, X. Han, et al., “High-Performance Artificial Synapse Based on CVD-Grown WSe2 Flakes With Intrinsic Defects,” ACS Applied Materials & Interfaces 15, no. 15 (2023): 19152–19162.

[64]

B. Ahn, Y. Kim, M. Kim, et al., “One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device,” Nano Letters 23, no. 17 (2023): 7927–7933.

[65]

B. Kumral, N. Barri, P. G. Demingos, et al., “Mechanically Reliable and Electronically Uniform Monolayer MoS2 by Passivation and Defect Healing,” Nature Communications 16, no. 1 (2025): 7105.

[66]

S. Ghatak, A. N. Pal, and A. Ghosh, “Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors,” ACS Nano 5, no. 10 (2011): 7707–7712.

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