Photochromic glass shows great promise for 3D optical information encryption and storage applications. The formation of Ag nanoclusters by light irradiation has been a significant development in the field of photochromic glass research. However, extending this approach to other metal nanoclusters remains a challenge. In this study, we present a pioneering method for crafting photochromic glass with reliably adjustable dual-mode luminescence in both the NIR and visible spectra. This was achieved by leveraging bimetallic clusters of bismuth, resulting in a distinct and novel photochromic glass. When rare-earth-doped, bismuth-based glass is irradiated with a 473 nm laser, and it undergoes a color transformation from yellow to red, accompanied by visible and broad NIR luminescence. This phenomenon is attributed to the formation of laser-induced (Bi⁺, Bi⁰) nanoclusters. We achieved reversible manipulation of the NIR luminescence of these nanoclusters and visible rare-earth luminescence by alternating exposure to a 473 nm laser and thermal stimulation. Information patterns can be inscribed and erased on a glass surface or in 3D space, and the readout is enabled by modulating visible and NIR luminescence. This study introduces a pioneering strategy for designing photochromic glasses with extensive NIR luminescence and significant potential for applications in high-capacity information encryption, optical data storage, optical communication, and NIR imaging. The exploration of bimetallic cluster formation in Bi represents a vital contribution to the advancement of multifunctional glass systems with augmented optical functionalities and versatile applications.

Plasmonic hot carrier engineering holds great promise for advanced infrared optoelectronic devices. The process of hot carrier transfer has the potential to surpass the spectral limitations of semiconductors, enabling detection of sub-bandgap infrared photons. By harvesting hot carriers prior to thermalization, energy dissipation is minimized, leading to highly efficient photoelectric conversion. Distinguished from conventional band-edge carriers, the ultrafast interfacial transfer and ballistic transport of hot carriers present unprecedented opportunities for high-speed photoelectric conversion. However, a complete description on the underlying mechanism of hot-carrier infrared optoelectronic device is still lacking, and the utilization of this strategy for tailoring infrared response is in its early stages. This review aims to provide a comprehensive overview of the generation, transfer and transport dynamics of hot carriers. Basic principles of hot-carrier conversion in heterostructures are discussed in detail. In addition, progresses of two-dimensional (2D) infrared hot-carrier optoelectronic devices are summarized, with a specific emphasis on photodetectors, solar cells, light-emitting devices and novel functionalities through hot-carrier engineering. Furthermore, challenges and prospects of hot-carrier device towards infrared applications are highlighted.

Developing novel lead-free ferroelectric materials is crucial for next-generation microelectronic technologies that are energy efficient and environment friendly. However, materials discovery and property optimization are typically time-consuming due to the limited throughput of traditional synthesis methods. In this work, we use a high-throughput combinatorial synthesis approach to fabricate lead-free ferroelectric superlattices and solid solutions of (Ba_0.7Ca_0.3)TiO₃ (BCT) and Ba(Zr_0.2Ti_0.8)O₃ (BZT) phases with continuous variation of composition and layer thickness. High-resolution x-ray diffraction (XRD) and analytical scanning transmission electron microscopy (STEM) demonstrate high film quality and well-controlled compositional gradients. Ferroelectric and dielectric property measurements identify the “optimal property point” achieved at the composition of 48BZT–52BCT. Displacement vector maps reveal that ferroelectric domain sizes are tunable by varying {BCT–BZT}_N superlattice geometry. This high-throughput synthesis approach can be applied to many other material systems to expedite new materials discovery and properties optimization, allowing for the exploration of a large area of phase space within a single growth.

Halide perovskites with naturally coupled electron-ion dynamics hold great potential for nonvolatile memory applications. Self-rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self-rectifying memristor firstly achieved in a single perovskite (NH═CINH₃)₃PbI₅ (abbreviated as (IFA)₃PbI₅), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)₃PbI₅ can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n-type AgI and p-type (IFA)₃PbI₅ gives rise to the rectification function like a p–n diode. Such a self-rectifying memristor exhibits the record-low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.

The demand for high-performance X-ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X-ray detectors are often susceptible to chemical and irradiation instability, complex fabrication processes, hazardous components, and difficult compatibility. Here, we investigate a two-dimensional (2D) material with a relatively low atomic number, Ti₃C₂T_x MXenes, and single crystal silicon for X-ray detection and single-pixel imaging (SPI). We fabricate a Ti₃C₂T_x MXene/Si X-ray detector demonstrating remarkable optoelectronic performance. This detector exhibits a sensitivity of 1.2 × 10⁷ µC Gy_air^–1 cm^–2, a fast response speed with a rise time of 31 µs, and an incredibly low detection limit of 2.85 nGy_air s^–1. These superior performances are attributed to the unique charge coupling behavior under X-ray irradiation via intrinsic polaron formation. The device remains stable even after 50 continuous hours of high-dose X-ray irradiation. Our device fabrication process is compatible with silicon-based semiconductor technology. Our work suggests new directions for eco-friendly X-ray detectors and low-radiation imaging system.

Crystallization speed of phase change material is one of the main obstacles for the application of phase change memory (PCM) as storage class memory in computing systems, which requires the combination of nonvolatility with ultra-fast operation speed in nanoseconds. Here, we propose a novel approach to speed up crystallization process of the only commercial phase change chalcogenide Ge₂Sb₂Te₅ (GST). By employing TiO₂ as the dielectric layer in phase change device, operation speed of 650 ps has been achieved, which is the fastest among existing representative PCM, and is comparable to the programing speed of commercial dynamic random access memory (DRAM). Because of its octahedral atomic configuration, TiO₂ can provide nucleation interfaces for GST, thus facilitating the crystal growth at the determinate interface area. Ti–O–Ti–O four-fold rings on the (110) plane of tetragonal TiO₂ is critical for the fast-atomic rearrangement in the amorphous matrix of GST that enables ultra-fast operation speed. The significant improvement of operation speed in PCM through incorporating standard dielectric material TiO₂ in DRAM paves the way for the application of phase change memory in high performance cache-type data storage.

All-solid Na-ion batteries (ASNIBs) present significant potential for integration into large-scale energy storage systems, capitalizing on their abundant raw materials, exemplary safety, and high energy density. Among the pivotal components propelling the advancement of ASNIBs, inorganic solid electrolytes (ISEs) have garnered substantial attention in recent years due to their high ionic conductivity (σ), wide electrochemical stability window (ESW), and high shear modulus. Herein, this review systematically encapsulates the latest strides in Na-ion ISEs, furnishing a comprehensive panorama of various ISE systems along with their interface engineering strategies against the electrodes. The prime focus resides in accentuating key strategies for refining ion conduction properties and interfacial compatibility of ISEs through structure design and interface modification. Furthermore, the review explores the foremost challenges and prospects inherent to sodium-ion ISEs, striving to deepen our understanding of how to engineer more robust and efficient ISEs and interface stability, poised for the forthcoming era of advanced ASNIBs.