The rise of two-dimensional tellurium for next-generation electronics and optoelectronics

Abstract

Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.

Graphical abstract

Keywords

two-dimensional materials / tellurium / van der Waals heterostructure / electronic / optoelectronic

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 22222505 and 51972204), the Natural Science Basic Research Plan in Shaanxi Province (Nos. 2021JM316 and 2021JM-203), the Science and Technology Program of Shaanxi Province (No. 2017KJXX-16), the Shaanxi Sanqin Scholars Innovation Team, the Fundamental Innovation Project and Young Scientist Initiative Project in School of Materials Science and Engineering (SNNU).

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