Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

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Front. Optoelectron. ›› 2014, Vol. 7 ›› Issue (4) : 501-508. DOI: 10.1007/s12200-014-0379-5
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Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

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