Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

{{article.zuoZheEn}}

PDF(609 KB)
PDF(609 KB)
Front. Optoelectron. ›› DOI: 10.1007/s12200-014-0379-5
RESEARCH ARTICLE

Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

  • {{article.zuoZheEn}}
Author information +
History +

Highlights

{{article.highlightEn}}

Abstract

{{article.abstractEn}}

Author summary

{{article.authorSummayEn}}

Keywords

Cite this article

EndNote

Ris (Procite)

Bibtex

Download citation ▾
{{article.zuoZheEn_L}}. {{article.titleEn}}. Front. Optoelectron., https://doi.org/10.1007/s12200-014-0379-5

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

RIGHTS & PERMISSIONS

{{article.copyright.year}} {{article.copyright.holder}}
Share on Mendeley
PDF(609 KB)

Accesses

Citations

Detail
Sections
Recommended

/

〈 〉