Review on flexible perovskite photodetector: processing and applications

Abstract

Next-generation optoelectronics should possess lightweight and flexible characteristics, thus conforming to various types of surfaces or human skins for portable and wearable applications. Flexible photodetectors as fundamental devices have been receiving increasing attention owing to their potential applications in artificial intelligence, aerospace industry, and wise information technology of 120, among which perovskite is a promising candidate as the light-harvesting material for its outstanding optical and electrical properties, remarkable mechanical flexibility, low-cost and low-temperature processing methods. To date, most of the reports have demonstrated the fabrication methods of the perovskite materials, materials engineering, applications in solar cells, light-emitting diodes, lasers, and photodetectors, strategies for device performance enhancement, few can be seen with a focus on the processing strategies of perovskite-based flexible photodetectors, which we will give a comprehensive summary, herein. To begin with, a brief introduction to the fabrication methods of perovskite (solution and vapor-based methods), device configurations (photovoltaic, photoconductor, and phototransistor), and performance parameters of the perovskite-based photodetectors are first arranged. Emphatically, processing strategies for photodetectors are presented following, including flexible substrates (i.e., polymer, carbon cloth, fiber, paper, etc.), soft electrodes (i.e., metal-based conductive networks, carbon-based conductive materials, and two-dimensional (2D) conductive materials, etc.), conformal encapsulation (single-layer and multilayer stacked encapsulation), low-dimensional perovskites (0D, 1D, and 2D nanostructures), and elaborate device structures. Typical applications of perovskite-based flexible photodetectors such as optical communication, image sensing, and health monitoring are further exhibited to learn the flexible photodetectors on a deeper level. Challenges and future research directions of perovskite-based flexible photodetectors are proposed in the end. The purpose of this review is not only to shed light on the basic design principle of flexible photodetectors, but also to serve as the roadmap for further developments of flexible photodetectors and exploring their applications in the fields of industrial manufacturing, human life, and health care.

Graphical abstract

Keywords

photodetector / perovskite / flexible / processing / application

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Nomenclature

Abbreviations
ALD	Atomic layer deposition
CCD	Charge-coupled device
CMOS	Complementary metal-oxide-semiconductor
CVD	Chemical vapor deposition
DMF	N,N-dimethylformamide
DMSO	Dimethyl sulfide
e-h	Electron-hole
EQE	External quantum efficiency
EVA	Ethylene-vinyl acetate
FET	Field-effect transistor
FTO	Fluorine-doped tin oxide
ITO	Indium-tin-oxide
LDR	Linear dynamic range
LED	Light-emitting diode
NEP	Noise equivalent power
PDMS	Polydimethylsiloxane
PECVD	Plasma enhanced chemical vapor deposition
PEDOT:EVA	Poly(3,4-ethylenedioxy-thiophene):poly(ethylene-co-vinyl acetate)
PEN	Polyethylenenaphthalate
PET	Polyethylene terephthalate
PI	Polyimide
PLQY	Photoluminescence quantum yield
PMMA	Poly(methyl methacrylimide)
PPG	Photoplethysmography
PS	Polystyrene
PVDF	Polyvinylidene fluoride
Variables
h	Planck’s constant
c	Speed of light
d	Channel length of photodetector
D*	Specific detectivity
∆f	Bandwidth
G	Photoconductive gain
q	Elementary electron charge
Idark	Dark current
Ilight	Light current
Pin	Power density of incident light
Pmax	Maximum detectable light density
Pmin	Minimum detectable light density
R	Responsivity
S	Effective area of photodetector
V	Bias volatge
λ	Wavelength of light
τfall	Falling time
τlifetime	Carrier lifetime
τrise	Rising time
τtransit	Carrier transit time
μ	Carrier mobility

Acknowledgements

The authors acknowledge the financial support from the National Key R&D Program of China (Grant No. 2019YFB1503200), the National Natural Science Foundation of China (Grant Nos. 51905203 and 52275562), and the Fund from the Science, Technology, and Innovation Commission of Shenzhen Municipality, China (Grant No. JCYJ20190809100209531).

Conflict of Interest

The authors declare that they have no conflict of interest.

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