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Frontiers of Optoelectronics

Front. Optoelectron.    2016, Vol. 9 Issue (3) : 341-345     DOI: 10.1007/s12200-016-0628-x
40 Gb/s NRZ-DQPSK data wavelength conversion with amplitude regeneration using four-wave mixing in a quantum dash semiconductor optical amplifier
Michael J. CONNELLY1(),Lukasz KRZCZANOWICZ1,Pascal MOREL2,Ammar SHARAIHA2,Francois LELARGE3,Romain BRENOT3,Siddharth JOSHI3,Sophie BARBET3
1. Optical Communications Research Group, Department of Electronic and Computer Engineering, University of Limerick, Limerick, Ireland
2. Lab-STICC, UMR CNRS 6285, École Nationale d’Ingénieurs de Brest CS 73862, 29238 Brest Cedex 3, France
3. Alcatel Thales III–V Laboratory, Route Departementale, 128, 91767 Palaiseau, France
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Differential quadrature phase shift keying (DQPSK) modulation is attractive in high-speed optical communications because of its resistance to fiber nonlinearities and more efficient use of fiber bandwidth compared to conventional intensity modulation schemes. Because of its wavelength conversion ability and phase preservation, semiconductor optical amplifier (SOA) four-wave mixing (FWM) has attracted much attention. We experimentally study wavelength conversion of 40 Gbit/s (20 Gbaud) non-return-to-zero (NRZ)-DQPSK data using FWM in a quantum dash SOA with 20 dB gain and 5 dBm output saturation power. Q factor improvement and eye diagram reshaping is shown for up to 3 nm pump-probe detuning and is superior to that reported for a higher gain bulk SOA.

Keywords differential quadrature phase shift keying (DQPSK)      phase modulation      quantum-dash      semiconductor optical amplifier (SOA)      four-wave mixing (FWM)      wavelength conversion     
Corresponding Authors: Michael J. CONNELLY   
Just Accepted Date: 19 August 2016   Online First Date: 06 September 2016    Issue Date: 28 September 2016
 Cite this article:   
Michael J. CONNELLY,Lukasz KRZCZANOWICZ,Pascal MOREL, et al. 40 Gb/s NRZ-DQPSK data wavelength conversion with amplitude regeneration using four-wave mixing in a quantum dash semiconductor optical amplifier[J]. Front. Optoelectron., 2016, 9(3): 341-345.
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Pascal MOREL
Francois LELARGE
Siddharth JOSHI
Fig.1  Dash-in-a-barrier structure, showing six stack layers of InAs QDashes in InGaAsP barriers
Fig.2  Unsaturated ASE spectra and polarization dependent gain characteristics (at 1530 nm) for a bias current of 500 mA. The spectral resolution is 1 nm
Fig.3  Continuous wave (CW) FWM efficiency versus pump-probe detuning for input probe and pump powers of - 7 and - 4 dBm respectively
Fig.4  Experimental setup. PC, polarization controller; PPG, pulse pattern generator; OSA, optical spectrum analyzer; BPD, balanced photodetector; DCA, digital communications analyzer
Fig.5  Eye diagrams of input (left) and converted (right) signals for probe power of: (a) - 6 dBm; (b) - 10 dBm; (c) - 15 dBm; (d) - 20 dBm. The detuning is 1 nm. The horizontal scale is 8.3 ps/div
Fig.6  Converted signal Q factor and power for a detuning of 1 nm
Fig.7  Converted signal Q factor and FWM efficiency vs. detuning range
Fig.8  Eye diagrams for: (a) input probe and (b)−(f) wavelength converted signals for various positive detunings. The horizontal scale is 8.3 ps/div
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