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Frontiers of Optoelectronics

Front Optoelec    2012, Vol. 5 Issue (4) : 445-456     DOI: 10.1007/s12200-012-0288-4
RESEARCH ARTICLE |
Homogeneous and inhomogeneous broadening effects on static and dynamic responses of quantum-dot semiconductor optical amplifiers
Hussein TALEB, Kambiz ABEDI()
Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, Iran
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Abstract

In this paper, the effects of homogeneous and inhomogeneous broadenings on the response of quantum-dot semiconductor optical amplifier (QD-SOAs) are investigated. For the first time, the state space model is used to simulate static and dynamic characteristics of the QD-SOA. It is found that with decreasing the homogeneous and inhomogeneous broadenings, the saturation power of the QD-SOA decreases and the optical gain and the ultrafast gain compression increase. Simulation results show that with decreasing the homogeneous broadening from 20 to 1 meV, the gain compression increases from 40% to 90%, the unsaturated optical gain becomes approximately tripled, and the saturation power becomes two times less. Also, simulations demonstrate that with decreasing the inhomogeneous broadening from 50 to 25 meV, the gain compression increases from less than 50% to more than 90%, the unsaturated optical gain becomes approximately 10-fold, and the saturation power becomes three times less. In addition, it is found that the homogeneous and inhomogeneous linewidths should be small for nonlinear applications. The homogeneous and inhomogeneous broadenings need to be large enough for linear applications.

Keywords homogeneous broadening      inhomogeneous broadening      quantum-dot (QD)      semiconductor optical amplifier (SOA)     
Corresponding Authors: ABEDI Kambiz,Email:K_Abedi@sbu.ac.ir   
Issue Date: 05 December 2012
 Cite this article:   
Hussein TALEB,Kambiz ABEDI. Homogeneous and inhomogeneous broadening effects on static and dynamic responses of quantum-dot semiconductor optical amplifiers[J]. Front Optoelec, 2012, 5(4): 445-456.
 URL:  
http://journal.hep.com.cn/foe/EN/10.1007/s12200-012-0288-4
http://journal.hep.com.cn/foe/EN/Y2012/V5/I4/445
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Hussein TALEB
Kambiz ABEDI
Fig.1  Energy band diagram of QD group. Relative energies of 91-th QD group are indicated in the figure. QW: quantum well, ES: excited state, GS: ground state
symbolvaluesymbolvalue
Lca2 mmEp22.2 /eV
W4 μmΓihc(v)40(10) meV
A8 × 10-5 cm2Γih50 meV
LH5 nmΓh10 meV
lD10Γ0.025
αi5 cm-1τ^egc(v)0.5(0.075) ps
T300 Kτ^ugc(v)0.33(0.022) ps
nD5 × 1010 cm-2τ^uec(v)0.66(0.043) ps
Dgc,v2τ^wuc(v)1.8(0.078) ps
Dec,v4τ^dr1 ns
Duc(v)10(20)τ^wrc(v)0.14(0.28) ns
Dwc(v)100(200)τ^urc(v)0.71(1.42) ns
|Menv|20.88rc(v)0.8(0.2)
?|e^.pcv|2?3.37 × 10-30 kg·eV2M+1181
fD6nr3.51
ND1023 m-3Vd4 × 10-10 cm3
Tab.1  Parameters used in numerical simulations
Fig.2  Temperature dependence of homogeneous linewidth
Fig.3  (a) Homogenous broadening function calculated for different homogeneous linewidths. The product of homogeneous and inhomogeneous functions () for different homogeneous linewidths, (b) , (c) and (d) . The inhomogeneous linewidth is
Fig.4  Absorption/gain spectra of QD-SOA under different values of homogeneous linewidth: (a) G = 1 meV, (b) G = 5 meV, and (c) G = 20 meV. (Injection current density: = 12 kA/cm, inhomogeneous broadening : G = 50 meV). At = 100 ps, a CW optical signal corresponding to the GS transition is injected into the active region. Simulations are terminated at = 200 ps, and the time interval between consecutive plots in the time axes is 6 ps
Fig.5  Optical gain response of QD-SOA under different values of homogeneous linewidth: (a) G = 1 meV; and (b) G = 20 meV; (c) percentage of ultra-fast gain compression as function of current density for three different homogeneous linewidths. (Inhomogeneous linewidth:G = 50 meV; pulse is injected at = 3 ps; simulations are terminated at = 15 ps)
Fig.6  Gain saturation curves of QD-SOA under different values of homogeneous linewidth (G = 1, 5, 10, 20 meV) and different current densities ( = 2, 6 kA/cm). Iinhomogeneous linewidth is G = 50 meV in all curves
Fig.7  (a) Homogenous and inhomogeneous broadening functions. The product of homogeneous and inhomogeneous functions () for different inhomogeneous linewidths, (b); (c); and (d). Homogeneous linewidth is in all figures
Fig.8  Absorption/gain spectra of QD-SOA under three different inhomogeneous linewidths (a) G = 25 meV; (b) G = 50 meV; (c) G = 75 meV. Pump current density is = 12 kA/cm, and homogeneous broadening is G = 10 meV. At = 100 ps, CW optical signal with photons energy corresponding to GS transition is injected into QD-SOA. Simulations are terminated at = 200 ps, and the time interval between consecutive plots in the time axis is 6 ps
Fig.9  Gain response of QD-SOA under different values of inhomogeneous linewidth and current density, (a) G = 25 meV; and (b) G = 75 meV; (c) percentage of ultra-fast gain compression as function of current density for different inhomogeneous linewidths. Homogeneous linewidth is G = 10 meV. Optical pulse is injected at = 3 ps and simulations are terminated at = 15 ps
Fig.10  Gain saturation curves of QD-SOA under different values of inhomogeneous broadening (G = 25, 50, 75 meV) and different current densities ( = 2, 6, and 12 kA/cm). In all curves, the homogeneous linewidth is G = 10 meV
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