Research progress on gallium nitride nanowire-based photodetectors

Abstract

Gallium nitride (GaN) nanowires have emerged as transformative materials for optoelectronic applications, particularly photodetection, owing to their unique combination of wide bandgap, high thermal stability, and intrinsic ultraviolet sensitivity. This review surveys recent progress in GaN nanowire-based photodetectors, focusing on structural design, performance optimization, and application development. GaN nanowires provide low dislocation density, high surface-to-volume ratio, and efficient strain relaxation, thereby overcoming the limitations of traditional planar GaN devices. Various device architectures, including photoconductive, positive-negative (p–n) and Positive-Intrinsic-Negative (p–i–n) junction, metal–semiconductor–metal, and piezo–phototronic detectors, are examined with respect to their performance metrics and operational principles. Integration with two-dimensional materials, perovskites, and organic materials further enhances responsivity and enables self-powered operation. Applications extend to imaging, sensing, logic operations, and flexible electronics. Remaining challenges include achieving large-scale uniformity, high response speed, and good device stability. Future research should prioritize improved fabrication processes and novel heterostructure exploration to advance both performance and practical deployment.

Keywords

gallium nitride nanowires / photodetectors / ultraviolet detection / heterogeneous integration / optoelectronic applications

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Higher Education Press 2026

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