Van der Waals epitaxy of type-II band alignment CsPbI₃/TMDC heterostructure for optoelectronic applications

Abstract

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction. Considering the unique optical properties of CsPbI₃ and transition metal dichalcogenides (TMDCs), their heterostructure present potential applications in both photonics and optoelectronics fields. Here, we demonstrate selective growth of cubic phase CsPbI₃ nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires (NWs) on monolayer WSe₂. Furthermore, we show growth of CsPbI₃ on both transferred WSe₂ on copper grid and WSe₂ based optoelectrical devices, providing a platform for structure analysis and device performance modification. Transmission electron microscopy (TEM) results reveal the epitaxial nature of cubic CsPbI₃ phase. The revealed growth fundamental of CsPbI₃ is universal valid for other two-dimensional substrates, offering a great advantage to fabricate CsPbI₃ based van der Waals heterostructures (vdWHs). X-ray photoelectron spectroscopy (XPS) and optical characterization confirm the type-II band alignment, resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower energy. The formation of WSe₂/CsPbI₃ heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 nA. These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

Graphical abstract

Keywords

van der Waals epitaxy / band alignment / growth fundamental / charge transfer / photodetector

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Declarations

The authors declare that they have no competing interests and there are no conflicts.

Supporting Information

The online version contains the additional experiment with formation of CsPbI₃/WSe₂ heterostructure under altered parameters, temperature-dependent PL spectra of CsPbI₃ armchair orientated NW/WSe₂, formation and PL spectra of CsPbI₃ nanostructure on the surface of transferred hBN and DL-WSe₂, and so on (PDF). See: https://doi.org/10.1007/s11467-024-1404-9 and https://journal.hep.com.cn/fop/EN/10.1007/s11467-024-1404-9.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 61974166 and 62274184) and the Hunan Provincial Natural Science Foundation of China (Grant Nos. 2021JJ20080 and 2021JJ20077).

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