Novel intelligent devices: Two-dimensional materials based memristors
Lena Du, Zhongchang Wang, Guozhong Zhao
Novel intelligent devices: Two-dimensional materials based memristors
Two-dimensional (2D) materials with atomic thickness, non-volatile resistive switching feature and compatibility with the semiconducting technology are naturally a good media of memristors. 2D materials-based memristors with excellent performance, low-power consumption and high integration density can be integrated with other circuit components to implement the complicate logic computing, which will become a key driving force for the development of artificial intelligence.
[1] |
AI and Compute: https://openai.com/blog/ai-and-compute/
|
[2] |
W. Q. Zhang, B. Gao, J. S. Tang, P. Yao, S. M. Yu, M. F. Chang, H. J. Yoo, H. Qian, and H. Q. Wu, Neuro-inspired computing chips, Nat. Electron. 3, 371 (2020)
CrossRef
ADS
Google scholar
|
[3] |
Y. Xi, B. Gao, J. S. Tang, A. Chen, M. F. Chang, X. S. Hu, J. V. D. Spiegel, and H. Qian, In-memory learning with analog resistive switching memory: A review and perspective, Proc. IEEE 109(1), 14 (2021)
CrossRef
ADS
Google scholar
|
[4] |
Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, Electrically switchable chiral light-emitting transistor, Science 344(6185), 725 (2014)
CrossRef
ADS
Google scholar
|
[5] |
R. J. Ge, X. H. Wu, L. B. Liang, S. M. Hus, Y. Q. Gu, E. Okogbue, H.y Chou, J. P. Shi, Y. F. Zhang, S. K. Banerjee, Y. Jung, J. C. Lee, and D. Akinwande, A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon, Adv. Mater. 33(7), 2007792 (2021)
CrossRef
ADS
Google scholar
|
[6] |
L. Liu, Y. Li, X. D. Huang, J. Chen, Z. Yang, K.-H. Xue, M. Xu, H. W. Chen, P. Zhou, and X. S. Miao, Low-power memristive logic device enabled by controllable oxidation of 2D HfSe2 for in-memory computing, Adv. Sci. 8(15), 2005038 (2021)
CrossRef
ADS
Google scholar
|
[7] |
H. Zhao, Z. P. Dong, H. Tian, D. DiMarzi, M. G. Han, L. H. Zhang, X. D. Yan, F. X. Liu, L. Shen, S. J. Han, S. Cronin, W. Wu, J. Tice, J. Guo, and H. Wang, Atomically thin femtojoule memristive device, Adv. Mater. 29(47), 1703232 (2017)
CrossRef
ADS
Google scholar
|
[8] |
Z. C. Zhou, F. Y. Yang, S. Wang, L. Wang, X. F. Wang, C. Wang, Y. Xie, and Q. Liu, Emerging of two-dimensional materials in novel memristor, Front. Phys. 17(2), 23204 (2022)
CrossRef
ADS
Google scholar
|
[9] |
L. Wang, X. Z. Xu, L. N. Zhang, R. X. Qiao, M. H. Wu, Z. C. Wang, S. Zhang, J. Liang, Z. H. Zhang, Z. B. Zhang, W. Chen, X. D. Xie, J. Y. Zong, Y. W. Shan, Y. Guo, M. Willinger, H. Wu, Q. Y. Li, W. L. Wang, P. Gao, S. W. Wu, Y. Zhang, Y. Jiang, D. P. Yu, E. G. Wang, X. D. Bai, Z. J. Wang, F. Ding, and K. H. Liu, Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper, Nature 570, 91 (2019)
CrossRef
ADS
Google scholar
|
[10] |
S. C. Chen, M. R. Mahmoodi, Y. Y. Shi, C. Mahata, B. Yuan, X. H. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, and M. Lanza, Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks, Nat. Electron. 3, 638 (2020)
CrossRef
ADS
Google scholar
|
/
〈 | 〉 |