Novel intelligent devices: Two-dimensional materials based memristors

Lena Du, Zhongchang Wang, Guozhong Zhao

PDF(281 KB)
PDF(281 KB)
Front. Phys. ›› 2022, Vol. 17 ›› Issue (2) : 23602. DOI: 10.1007/s11467-022-1152-7
VIEW & PERSPECTIVE
VIEW & PERSPECTIVE

Novel intelligent devices: Two-dimensional materials based memristors

Author information +
History +

Abstract

Two-dimensional (2D) materials with atomic thickness, non-volatile resistive switching feature and compatibility with the semiconducting technology are naturally a good media of memristors. 2D materials-based memristors with excellent performance, low-power consumption and high integration density can be integrated with other circuit components to implement the complicate logic computing, which will become a key driving force for the development of artificial intelligence.

Graphical abstract

Cite this article

Download citation ▾
Lena Du, Zhongchang Wang, Guozhong Zhao. Novel intelligent devices: Two-dimensional materials based memristors. Front. Phys., 2022, 17(2): 23602 https://doi.org/10.1007/s11467-022-1152-7

References

[1]
AI and Compute: https://openai.com/blog/ai-and-compute/
[2]
W. Q. Zhang, B. Gao, J. S. Tang, P. Yao, S. M. Yu, M. F. Chang, H. J. Yoo, H. Qian, and H. Q. Wu, Neuro-inspired computing chips, Nat. Electron. 3, 371 (2020)
CrossRef ADS Google scholar
[3]
Y. Xi, B. Gao, J. S. Tang, A. Chen, M. F. Chang, X. S. Hu, J. V. D. Spiegel, and H. Qian, In-memory learning with analog resistive switching memory: A review and perspective, Proc. IEEE 109(1), 14 (2021)
CrossRef ADS Google scholar
[4]
Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, Electrically switchable chiral light-emitting transistor, Science 344(6185), 725 (2014)
CrossRef ADS Google scholar
[5]
R. J. Ge, X. H. Wu, L. B. Liang, S. M. Hus, Y. Q. Gu, E. Okogbue, H.y Chou, J. P. Shi, Y. F. Zhang, S. K. Banerjee, Y. Jung, J. C. Lee, and D. Akinwande, A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon, Adv. Mater. 33(7), 2007792 (2021)
CrossRef ADS Google scholar
[6]
L. Liu, Y. Li, X. D. Huang, J. Chen, Z. Yang, K.-H. Xue, M. Xu, H. W. Chen, P. Zhou, and X. S. Miao, Low-power memristive logic device enabled by controllable oxidation of 2D HfSe2 for in-memory computing, Adv. Sci. 8(15), 2005038 (2021)
CrossRef ADS Google scholar
[7]
H. Zhao, Z. P. Dong, H. Tian, D. DiMarzi, M. G. Han, L. H. Zhang, X. D. Yan, F. X. Liu, L. Shen, S. J. Han, S. Cronin, W. Wu, J. Tice, J. Guo, and H. Wang, Atomically thin femtojoule memristive device, Adv. Mater. 29(47), 1703232 (2017)
CrossRef ADS Google scholar
[8]
Z. C. Zhou, F. Y. Yang, S. Wang, L. Wang, X. F. Wang, C. Wang, Y. Xie, and Q. Liu, Emerging of two-dimensional materials in novel memristor, Front. Phys. 17(2), 23204 (2022)
CrossRef ADS Google scholar
[9]
L. Wang, X. Z. Xu, L. N. Zhang, R. X. Qiao, M. H. Wu, Z. C. Wang, S. Zhang, J. Liang, Z. H. Zhang, Z. B. Zhang, W. Chen, X. D. Xie, J. Y. Zong, Y. W. Shan, Y. Guo, M. Willinger, H. Wu, Q. Y. Li, W. L. Wang, P. Gao, S. W. Wu, Y. Zhang, Y. Jiang, D. P. Yu, E. G. Wang, X. D. Bai, Z. J. Wang, F. Ding, and K. H. Liu, Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper, Nature 570, 91 (2019)
CrossRef ADS Google scholar
[10]
S. C. Chen, M. R. Mahmoodi, Y. Y. Shi, C. Mahata, B. Yuan, X. H. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, and M. Lanza, Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks, Nat. Electron. 3, 638 (2020)
CrossRef ADS Google scholar

RIGHTS & PERMISSIONS

2022 Higher Education Press
AI Summary AI Mindmap
PDF(281 KB)

Accesses

Citations

Detail

Sections
Recommended

/