Emerging of two-dimensional materials in novel memristor

Abstract

The rapid development of big-data analytics (BDA), internet of things (IoT) and artificial intelligent Technology (AI) demand outstanding electronic devices and systems with faster processing speed, lower power consumption, and smarter computer architecture. Memristor, as a promising Non-Volatile Memory (NVM) device, can effectively mimic biological synapse, and has been widely studied in recent years. The appearance and development of two-dimensional materials (2D material) accelerate and boost the progress of memristor systems owing to a bunch of the particularity of 2D material compared to conventional transition metal oxides (TMOs), therefore, 2D material-based memristors are called as new-generation intelligent memristors. In this review, the memristive (resistive switching) phenomena and the development of new-generation memristors are demonstrated involving grapheme (GR), transition-metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) based memristors. Moreover, the related progress of memristive mechanisms is remarked.

Graphical abstract

Keywords

memristor / resistive switching / 2D material / switching mechanism / conductive channel

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