Observation of pseudogap in SnSe₂ atomic layers grown on graphite

Abstract

Superconducting metal dichalcogenides (MDCs) present several similarities to the other layered superconductors like cuprates. The superconductivity in atomically thin MDCs has been demonstrated by recent experiments, however, the investigation of the superconductivity intertwined with other orders are scarce. Investigating the pseudogap in atomic layers of MDCs may help to understand the superconducting mechanism for these true two-dimensional (2D) superconducting systems. Herein we report a pseudogap opening in the tunneling spectra of thin layers of SnSe₂ epitaxially grown on highly oriented pyrolytic graphite (HOPG) with scanning tunneling microscopy/spectroscopy (STM/STS). A significant V-shaped pseudogap was observed to open near the Fermi level (E_F) in the STS. And at elevated temperatures, the gap gradually evolves to a shallow dip. Our experimental observations provide direct evidence of a pseudogap state in the electron-doped SnSe₂ atomic layers on the HOPG surface, which may stimulate further exploration of the mechanism of superconductivity at 2D limit in MDCs.

Keywords

scanning tunneling microscopy / pseudogap / metal dichalcogenides / SnSe2 / van der Waals epitaxy

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