Strong localization across the metal-insulator transition at the Ag/Si(111)-(\sqrt{\mathrm{3}}\times \sqrt{\mathrm{3}})R30◦ interface

Abstract

We present the temperature dependent electrical transport measurements of Ag/Si(111)-(\sqrt{\mathrm{3}}\times \sqrt{\mathrm{3}})R30◦ by the in situ micro-four-point probe method integrated with scanning tunneling microscopy. The surface structure characterizations show hexagonal patterns at room temperature, which supports the inequivalent triangle (IET) model. A metal-insulator transition occurs at ~115 K.The lowtemperature transportmeasurements clearly reveal the strong localization characteristics of the insulating phase.

Keywords

surface conductivity / metal-insulator transition / localization / scanning tunneling microscopy

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