Electron transport properties of three-dimensional topological insulators
Yong-qing Li , Ke-hui Wu , Jun-ren Shi , Xin-cheng Xie
Front. Phys. ›› 2012, Vol. 7 ›› Issue (2) : 165 -174.
Electron transport properties of three-dimensional topological insulators
We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron–electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.
topological insulator / electron transport / localization / electron–electron interaction / spin–orbit coupling
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The coefficient α would be 4 × 1/2= 2 for graphene if the intervalley and chirality breaking scatterings could be neglected. |
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α≃1/2 was also obtained previously from Bi2Se3 thin films on Si by F. Yang et al. (unpublished) |
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Qualitatively similar variation of α with VG was also reported in Ref. [75], in which the weak antilocalization signal is however superimposed on fluctuating background of unknown origin. The non-Hall-bar device-geometry also precluded accurate determination of α in that work. |
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Higher Education Press and Springer-Verlag Berlin Heidelberg
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