Microscopic phonon theory of Si/Ge nanocrystals

Abstract

Microscopic phonon theory of semiconductor nanocrystals (NCs) is reviewed in this paper. Phonon modes of Si and Ge NCs with various sizes of up to 7 nm are investigated by valence force field theory. Phonon modes in spherical SiGe alloy NCs approximately 3.6 nm (containing 1147 atoms) in size have been investigated as a function of the Si concentration. Phonon density-of-states, quantum confinement effects, as well as Raman intensities are discussed.

References

1. Ouellette J The Ind. Phys. 2002 822
2. Yoffe A D Adv. Phys. 1993 42173. doi: 10.1080/00018739300101484
3. Yoffe A D Adv. Phys. 2001 501. doi: 10.1080/00018730010006608
4. Yoffe A D Adv. Phys. 2002 51799. doi: 10.1080/00018730110117451
5. Slack G A Hussain M A J. Appl. Phys. 1991 702694. doi: 10.1063/1.349385
6. Vining C B Nature (London) 2008 451132. doi: 10.1038/451132a
7. Ren S F Cheng W Chen G J. Appl. Phys. 2006 100103505. doi: 10.1063/1.2384810
8. Roca E Trallero-Giner C Cardona M Phys. Rev. B 1994 4913704. doi: 10.1103/PhysRevB.49.13704
9. Chamberlain M P Trallero-Giner C Cardona M Phys. Rev. B 1995 511680. doi: 10.1103/PhysRevB.51.1680
10. Trallero-Giner C Debernardi A Cardona M Menendez-Proupin E Ekimov A I Phys. Rev. B 1998 574664. doi: 10.1103/PhysRevB.57.4664
11. Harrison W A Electronic Structure and the Properties of SolidsSan FranciscoFreeman 1980
12. Cheng W Ren S F Phys. Rev. B 2002 65205305. doi: 10.1103/PhysRevB.65.205305
13. Ren S F Cheng W Phys. Rev. B 2002 66205328. doi: 10.1103/PhysRevB.66.205328
14. Cheng W Ren S F Yu P Y Phys. Rev. B 2003 68193309. doi: 10.1103/PhysRevB.68.193309
15. Ren S F Cheng W Yu P Y Phys. Rev. B 2004 69235327. doi: 10.1103/PhysRevB.69.235327
16. Cheng W Ren S F Yu P Y Phys. Rev. B 2005 71174305. doi: 10.1103/PhysRevB.71.174305
17. Cheng W Ren S F Yu P Y Phys. Rev. B 2005 7259901. doi: 10.1103/PhysRevB.72.059901
18. Cheng W Ren S F Yu P Y in AIP Conference Proceedings 2005 Vol. 772851. doi: 10.1063/1.1994373
19. Cheng W Ren S F Marx D T in Nanoscience in BiomedicineShi D LChapter 20, Springer and Tsinghua UniversityPress 2008
20. Tsang J C in Light Scattering in SolidsCardonaandV MGüntherodt GTopics in Applied Physics, Vol. 66 Berlin, HeidelbergSpringer 1989 233
21. Headrick R L Baribeau J -M Lockwood D J Jackman T E Bedzyk M J Appl. Phys. Lett. 1993 62687. doi: 10.1063/1.108840
22. Kwok S H Yu P Y Tung C H Zhang Y H Li M F Peng C S Zhou J M Phys. Rev. B 1999 594980. doi: 10.1103/PhysRevB.59.4980
23. Bell R J in Methods in Computational PhysicsAlderBFernbach SRotenberg MVol. 15 New YorkAcademic Press 1976 260
24. Lockwood D J Rajan K Fenton E W Baribeaue J -M Denhoff M W Solid State Commun. 1987 61465. doi: 10.1016/0038‐1098(87)90492‐3
25. Vegard L Z. Phys. 1921 517. doi: 10.1007/BF01349680
26. Lamb H Proc. London Math. Soc. 1982 13189. doi: 10.1112/plms/s1‐13.1.189
27. Genzel L Martin T P Perry C H Phys. Status Solidi B 1974 6283. doi: 10.1002/pssb.2220620108
28. Renucci M A Renucci J B Cardona M in Proceedings of the International Conference onLight Scattering in SolidsBalkanskiMParisFlammarion 1971 326
29. Yu P Y Cardona M Fundamentals of Semiconductors,Physics and Materials PropertiesBerlin, HeidelbergSpringer 2003
30. Freire P T C Araujo Silva M A Reynoso V C S Vaz A R Lemos V L Phys. Rev. B 1997 556743. doi: 10.1103/PhysRevB.55.6743
31. Hwang Y N Shin S Park H L Park S H Kim U Jeong H S Shin E J Kim D Phys. Rev. B 1996 5415120. doi: 10.1103/PhysRevB.54.15120
32. Balandin A Wang K L Kouklin N Bandyopadhyay S Appl. Phys. Lett. 2000 76137. doi: 10.1063/1.125681
33. Teo K L Kwok S H Yu P Y Guha S Phys. Rev.B 2000 621584. doi: 10.1103/PhysRevB.62.1584
34. Yu P Y privatecommunication
35. Duval E Phys. Rev. B 1992 465795. doi: 10.1103/PhysRevB.46.5795