InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer

doi:10.1007/s11467-007-0055-y

Front. Phys. ›› 2007, Vol. 2 ›› Issue (4) : 440 -445. DOI: 10.1007/s11467-007-0055-y

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Abstract

An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure on the In_0.53Ga_0.47As and In_0.52Al_0.48As buffer layer lattice-matched to InP(001) substrate using molecular beam epitaxy. The effects of AlAs insertion on the InAs nanostructures were investigated and discussed.

Keywords

nanostructures, MBE, InAs/InP(001)

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null. InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer. Front. Phys., 2007, 2(4): 440-445 DOI:10.1007/s11467-007-0055-y