Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy

{{article.zuoZheEn}}

PDF(417 KB)
PDF(417 KB)
Front. Phys. ›› 2007, Vol. 2 ›› Issue (1) : 68-71. DOI: 10.1007/s11467-007-0012-9

Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy

  • {{article.zuoZheEn}}
Author information +
History +

Highlights

{{article.highlightEn}}

Abstract

{{article.abstractEn}}

Author summary

{{article.authorSummayEn}}

Keywords

Cite this article

Download citation ▾
{{article.zuoZheEn_L}}. {{article.titleEn}}. Front. Phys., 2007, 2(1): 68‒71 https://doi.org/10.1007/s11467-007-0012-9

References

References

{{article.reference}}

RIGHTS & PERMISSIONS

{{article.copyright.year}} {{article.copyright.holder}}
PDF(417 KB)

Accesses

Citations

Detail

Sections
Recommended

/