Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy

WU Ju; JIN Pen; Lv Xiao-jing; JIAO Yu-heng; WANG Zhan-guo

doi:10.1007/s11467-007-0012-9

Front. Phys. ›› 2007, Vol. 2 ›› Issue (1) :68 -71. DOI: 10.1007/s11467-007-0012-9

Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy

WU Ju, JIN Pen, Lv Xiao-jing, JIAO Yu-heng, WANG Zhan-guo

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Abstract

Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs (001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.

Keywords

In As/GaAs dots, SK mode

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WU Ju, JIN Pen, Lv Xiao-jing, JIAO Yu-heng, WANG Zhan-guo. Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy. Front. Phys., 2007, 2(1): 68-71 DOI:10.1007/s11467-007-0012-9