Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy

doi:10.1007/s11467-007-0012-9

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Front. Phys. ›› 2007, Vol. 2 ›› Issue (1) : 68-71. DOI: 10.1007/s11467-007-0012-9

Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy

WU Ju, JIN Pen, Lv Xiao-jing, JIAO Yu-heng, WANG Zhan-guo

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Abstract

Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs (001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one.

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WU Ju, JIN Pen, Lv Xiao-jing, JIAO Yu-heng, WANG Zhan-guo. Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs (001) fabricated using molecular beam epitaxy. Front. Phys., 2007, 2(1): 68‒71 https://doi.org/10.1007/s11467-007-0012-9