Chemical vapor deposited diamond with versatile grades: from gemstone to quantum electronics

Abstract

Chemical vapor deposited (CVD) diamond as a burgeoning multi-functional material with tailored quality and characteristics can be artificially synthesized and controlled for various applications. Correspondingly, the application-related “grade” concept associated with materials choice and design was gradually formulated, of which the availability and the performance are optimally suited. In this review, the explicit diversity of CVD diamond and the clarification of typical grades for applications, i.e., from resplendent gem-grade to promising quantum-grade, were systematically summarized and discussed, according to the crystal quality and main consideration of ubiquitous nitrogen impurity content as well as major applications. Realizations of those, from quantum-grade with near-ideal crystal to electronic-grade having extremely low imperfections and then to optical, thermal as well as mechanical-grade needing controlled flaws and allowable impurities, would competently fulfill the multi-field application prospects with appropriate choice in terms of cost and quality. Exceptionally, wide range defects and impurities in the gem-grade diamond (only indicating single crystal), which are detrimental for technology applications, endows CVD crystals with fancy colors to challenge their natural counterparts.

Graphical abstract

Keywords

CVD diamond / synthesis and characterization / quality and impurity / grading / application

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (Grant No. 2016YFE0133200), the European Union’s Horizon 2020 Research and Innovation Staff Exchange Scheme (Grant No. 734578), the Post-doctor Research Foundation of Shunde Graduate School of University of Science and Technology Beijing (Grant No. 2021BH006), the National Natural Science Foundation of China (Grant No. 52172037), the Beijing Municipal Natural Science Foundation (Grant Nos. 2212036 and 4192038), the Fundamental Research Funds for the Central Universities (FRF-MP-20-49Z), and the Science and Technology Innovation Special Project of Foshan Government (Grant Nos. BK20BE021 and BK21BE004). Special thanks to the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2021A1515110631) and the national high-level-university sponsored graduate program of China Scholarship Council (CSC No. 201806460089), USTB-Monte Biance Joint R&D Center.

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