Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics

Abstract

Polycyclic aromatic hydrocarbons with zigzag peripheries are high perspective candidates for organic electronics. However, large fused acenes are still poorly studied due to the tedious synthesis. Herein we report a non-substituted fused bistetracene DBATT (2.3,8.9-dibenzanthanthrene) as the semiconductor on low-voltage-driven organic thin-film transistors. The systematic studies of thin-film growth on various self-assembled monolayer (SAM) modified gate dielectrics and the electrical performances were carried out. The sub-monolayer of the semiconductor film shows larger island domains on the alkyl chain SAM. This device exhibits the hole mobility of 0.011 cm²·V⁻¹·s⁻¹ with a current ratio of I_on/I_off above 10⁵.

Keywords

fused bis-tetracene / organic field-effect transistor / contact resistance / self-assembled monolayer

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Disclosure of potential conflicts of interests

The authors declare no potential conflicts of interests.

Acknowledgements

Funded by the Deutsche Forschungsgemeinschaft (DFG) – Projektnummer 182849149 – SFB 953, the Cluster of Excellence “Engineering of Advanced Materials” (EAM), the “Graduate School Molecular School”. B.Z. (201706060215) acknowledges the supporting in Germany from China Scholarship Council (CSC). D.L. thanks the Alexander von Humboldt Foundation and the Japan Society for the Promotion of Science (JSPS) for a fellowship.

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