Optimized optical design of thin-film transistor arrays for high transmittance and excellent chromaticity

Abstract

Transmittance and chromaticity are essential requirements for optical performance of thin-film transistor (TFT) arrays. However, it is still a challenge to get high transmittance and excellent chromaticity at the same time. In this paper, optimized optical design by using antireflection film theory and optical phase modulation is demonstrated in low temperature poly-silicon (LTPS) TFT arrays. To realize high transmittance, the refractive index difference of adjacent films is modified by using silicon oxynitride (SiO_xN_y) with adjustable refractive index. To realize excellent chromaticity, the thicknesses of multilayer films are precisely regulated for antireflection of certain wavelength light. The results show that the transmittance and chromaticity have been improved by about 6% and 18‰, respectively, at the same time, which is a big step forward for high optical performance of TFT arrays. The device characteristics of the TFT arrays with the optimal design, such as threshold voltage and electron mobility, are comparable to those of conventional TFT arrays. The optimized optical design results in enhanced power-conversion efficiencies and perfects the multilayer film design on the basic theory, which has great practicability to be applied in TFT arrays.

Keywords

TFT array / transparent dielectric material / chromaticity / antireflection film / optical phase modulation

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Acknowledgements

This work was supported by the Shenzhen Science and Technology Innovation (Grant No. JCYJ20180507181702150), the Guangdong Science and Technology Plan Project (Grant No. 2019A050510011), and the National Natural Science Foundation of China (Grant No. 61504004).

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