Structural, electrical and photoluminescence properties of Er³⁺-doped SrBi₄Ti₄O₁₅--Bi₄Ti₃O₁₂ inter-growth ceramics

Abstract

Er³⁺-doped SrBi₄Ti₄O₁₅–Bi₄Ti₃O₁₂ (SBT–BIT–xEr³⁺, x = 0.00, 0.05, 0.10, 0.15 and 0.20) inter-growth ceramics were synthesized by the solid-state reaction method. Structural, electrical and up-conversion properties of SBT–BIT–xEr³⁺ were investigated. All samples showed a single phase of the orthorhombic structure. Raman spectroscopy indicated that the Er³⁺ substitution for Bi³⁺ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT–BIT–xEr³⁺ ceramics. The substitution of Bi³⁺ by Er³⁺ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation energy. Piezoelectric constant d₃₃ was slightly improved, but dielectric constant was decreased with the Er³⁺ doping. The SBT–BIT–xEr³⁺ ceramic with x = 0.15 exhibits the optimized electrical behavior (d₃₃ ~17 pC/N, tanδ ~0.83%). Moreover, two bright green (532 and 548 nm) and one red (670 nm) emission bands were observed under the 980 nm excitation. Optimized emission intensity was also obtained when x = 0.15 for the SBT–BIT–xEr³⁺ ceramic. Therefore, this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.

Keywords

inter-growth structure / electrical property / multifunctional optoelectronic material / photoluminescence

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 51562014, 51602135, 51862016, 51762024 and 61671224), the Natural Science Foundation of Jiangxi Province (20171BAB216012), and the Foundation of Jiangxi Provincial Education Department (GJJ170789, GJJ170794 and GJJ170804).

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