2.45 GHz 0.8 mW voltage-controlled ring oscillator (VCRO) in 28 nm fully depleted silicon-on-insulator (FDSOI) technology

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Front. Mater. Sci. ›› 2015, Vol. 9 ›› Issue (2) : 156-162. DOI: 10.1007/s11706-015-0288-6
RESEARCH ARTICLE

2.45 GHz 0.8 mW voltage-controlled ring oscillator (VCRO) in 28 nm fully depleted silicon-on-insulator (FDSOI) technology

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