GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Keywords

gallium nitride / MOSFET / recess gate / dry etching

References

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Acknowledgments

The authors Q.W. and Y.J. are supported by a scholarship under the State Scholarship Fund of China Scholarship Council.

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg