GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Qingpeng WANG; Jin-Ping AO; Pangpang WANG; Ying JIANG; Liuan LI; Kazuya KAWAHARADA; Yang LIU

doi:10.1007/s11706-015-0286-8

Front. Mater. Sci. ›› 2015, Vol. 9 ›› Issue (2) : 151 -155. DOI: 10.1007/s11706-015-0286-8

RESEARCH ARTICLE

GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

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gallium nitride / MOSFET / recess gate / dry etching

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Qingpeng WANG, Jin-Ping AO, Pangpang WANG, Ying JIANG, Liuan LI, Kazuya KAWAHARADA, Yang LIU. GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate. Front. Mater. Sci., 2015, 9(2): 151-155 DOI:10.1007/s11706-015-0286-8

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