Electrical conductivity of Gd doped BiFeO₃---PbZrO₃ composite

Abstract

The composite, 0.5(BiGd_0.15Fe_0.85O₃)---0.5(PbZrO₃), was synthesized using the solid-state reaction technique. The formation of the compound was confirmed by XRD with an orthorhombic structure at room temperature. The impedance parameters were studied using an impedance analyzer in a wide range of frequency (10²---10⁶ Hz) at different temperatures. The Nyquist plot suggests the contribution of bulk effect and a slight indication of grain boundary effect and the bulk resistance decreases with a rise in temperature. The presence of temperature-dependent relaxation process occurs in the material. Electrical modulus reveals the presence of the hopping mechanism in the materials. The value of exponent n, pre-factor A and σ_dc were obtained by fitting ac conductivity data with Jonscher’s universal power law. The activation energies calculated from the ac conductivity were found to be 0.50, 0.46, 0.44, 0.43, 0.42 and 0.38 eV at 1, 10, 50, 100, 500 kHz and 1 MHz respectively in the temperature region of 110°C---350°C. The dc conductivity was found to increase with the rise in temperature. The activation energy calculated from complex impedance plot and from the fitted Jonscher’s power law are very close, which results similar type of charge carrier exist in conduction mechanism of the material.

Keywords

solid state reaction / XRD / impedance / electrical conductivity

References

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