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Effect of electrochemical etching current on prepared perforated silicon structures for neutron detectors
- Xiao-Qiang FAN1, Yong JIANG1, Chang-Yong ZHAN2(), Yu ZOU2, Jian-Chun WU2, Ning-Kang HUANG2
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1. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China; 2. Key Laboratory of Radiation Physics and Technology (Ministry of Education), Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
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History
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Received |
Accepted |
Published |
15 Nov 2012 |
12 Jan 2013 |
05 Mar 2013 |
Issue Date |
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05 Mar 2013 |
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References
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[2] Schelten J, Balzhauser M, Hongesberg F, . A new neutron detector development based on silicon semiconductor and 6LiF converter. Physica B: Condensed Matter , 1997, 234-236: 1084-1086
[3] Guardiola C, Fleta C, Lozano M, . Silicon planar detectors adapted to slow neutron detection. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2010, 23(4-5): 324-331
[4] McGregor D S, Bellinger S L, Bruno D, . Perforated diode neutron detector modules fabricated from high-purity silicon. Radiation Physics and Chemistry , 2009, 78(10): 874-881
[5] Bellinger S L, Fronk R G, McNeil W J, . Enhanced variant designs and characteristics of the microstructured solid-state neutron detector. Nuclear Instruments & Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2011, 652(1): 387-391
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[8] Smith R L, Collins J D. Porous silicon formation mechanisms. Journal of Applied Physics , 1992, 71(8): R1-R22