The effect of different electrode structures on the dielectric properties of lanthanum-doped lead titanate ferroelectric thin films

Abstract

Lanthanum-doped lead titanate [(Pb_0.9,La_0.1)TiO₃, PLT10] ferroelectric thin films were grown on Si(100) and Pt/Ti/SiO₂/Si(100) substrates by radio frequency (RF) magnetron sputtering. The crystalline properties of PLT10 films were studied by X-ray diffractometry (XRD). Photolithographic technique was applied to fabricate the interdigital electrodes on PLT10 thin films on Si(100) substrates. The dielectric properties of PLT10 thin films with different electrodes were measured. At room temperature and 1 kHz testing frequency, the dielectric constant of the PLT10 thin film with interdigital electrodes is 386. The dielectric constant of the PLT10 thin film fabricated under the same technological conditions with parallel plate electrodes structure is 365, while the dielectric constant and loss of the PLT10 thin film with interdigital electrodes are decreased faster than those of the film with parallel plate electrodes with increasing frequency. This is because more influences of interface state are introduced due to the interdigital electrode configuration.

Keywords

lanthanum-doped lead titanate (PLT), ferroelectric thin films, sputtering, interdigital electrodes