Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

Bo SHEN

Front. Optoelectron. ›› 2015, Vol. 8 ›› Issue (4) : 456-460.

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Front. Optoelectron. ›› 2015, Vol. 8 ›› Issue (4) : 456-460. DOI: 10.1007/s12200-015-0459-1
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Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices

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Bo SHEN. Development trends of GaN-based wide bandgap semiconductors: from solid state lighting to power electronic devices. Front. Optoelectron., 2015, 8(4): 456‒460 https://doi.org/10.1007/s12200-015-0459-1

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This paper was supported by the National Basic Research Program of China (973 Program) (NO. 2012CB619300).

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg
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