Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode

Abstract

Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strain-reduction layer, green InGaN/GaN MQW and blue InGaN/GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electroluminescence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence.

Keywords

multi-quantum well (MQW) / luminescence / dual-wavelength / metal-organic chemical vapor deposition (MOCVD)

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 60777019).

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg