The Mott-Schottky plots (Fig. 5(b)) were employed to determine the
Efb of TiO
2(c), and the positive slope denotes that TiO
2(c) is an n-type semiconductor. All Mott-Schottky plots of the TiO
2(c) film have the same intercept with the
x-axis at −0.66 V versus SCE (
Eθ = 0.24 V versus NHE) [
40,
41], and thus its flat-band potential (
Efb) can be calculated to be −0.66 V+ 0.24 V= −0.42 V versus NHE. Since the conduction band (CB) bottom is more negative by approximately −0.1 V than
Efb for a certain n-type semiconductor [
42], the CB level (
ECB) of TiO
2(c) can be estimated to be approximately −0.52 V versus NHE. According to Fig. 5(a) and Table 1, the
Eg value of TiO
2(c) is 3.16 eV, thus, its valence band (VB) level (
EVB) can be calculated to be 2.64 V versus NHE according to the formula (
EVB =
Eg +
ECB). Similarly, the Mott-Schottky plots (Fig. 5(c)) of the TiN film indicate that the
Efb is −1.05+ 0.24= –0.81 V versus NHE, corresponding a work function of 3.93 (= –0.81+ 4.74) eV versus vacuum, similar to the reported value (approximately 4.0 eV) [
23]. According to the above results, the energetic alignment of the TiN/N-TiO
2 composite (derived from the TiO
2 to MA mass ratio of 1:7) can be drown as shown in Fig. 5(d). Under full spectrum illumination of the Xe-lamp, the TiN/N-TiO
2 composite enables a broad UV-vis light photon capturing by the nitrogen-doping and the plasmonic effect of the
in situ formed TiN. The
ECB level of N-TiO
2 is negative compared to the H
+/H
2 reduction potential (
E = –0.0592pH= − 0.18 V versus NHE) since the pH value of photoreaction suspension is 3.0 (Fig. 4(b)), while the
Efb (−0.81 V) of TiN is negative compared to the
ECB (–0.52 V) of N-TiO
2. This energetic alignment is thermodynamically favorable for hot carrier injecting to the CB of N-TiO
2 [
21], and those injected electrons and the photoexcited ones of N-TiO
2 are further transferred to the Pt cocatalyst to participate in the H
2 evolution reaction [
43,
44]. Meanwhile, the photogenerated holes remain in N-TiO
2 transfer to the photocatalyst for the oxidation reaction of hole scavenger [
45].