Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon

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Front. Energy ›› 2017, Vol. 11 ›› Issue (1) : 4-22. DOI: 10.1007/s11708-016-0442-6
RESEARCH ARTICLE

Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon

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