Impact of thermal processes on multi-crystalline silicon

Moonyong KIM, Phillip HAMER, Hongzhao LI, David PAYNE, Stuart WENHAM, Malcolm ABBOTT, Brett HALLAM

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PDF(630 KB)
Front. Energy ›› 2017, Vol. 11 ›› Issue (1) : 32-41. DOI: 10.1007/s11708-016-0427-5
RESEARCH ARTICLE
RESEARCH ARTICLE

Impact of thermal processes on multi-crystalline silicon

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Abstract

Fabrication of modern multi-crystalline silicon solar cells involves multiple processes that are thermally intensive. These include emitter diffusion, thermal oxidation and firing of the metal contacts. This paper illustrates the variation and potential effects upon recombination in the wafers due to these thermal processes. The use of light emitter diffusions more compatible with selective emitter designs had a more detrimental effect on the bulk lifetime of the silicon than that of heavier diffusions compatible with a homogenous emitter design and screen-printed contacts. This was primarily due to a reduced effectiveness of gettering for the light emitter. This reduction in lifetime could be mitigated through the use of a dedicated gettering process applied before emitter diffusion. Thermal oxidations could greatly improve surface passivation in the intra-grain regions, with the higher temperatures yielding the highest quality surface passivation. However, the higher temperatures also led to an increase in bulk recombination either due to a reduced effectiveness of gettering, or due to the presence of a thicker oxide layer, which may interrupt hydrogen passivation. The effects of fast firing were separated into thermal effects and hydrogenation effects. While hydrogen can passivate defects hence improving the performance, thermal effects during fast firing can dissolve precipitating impurities such as iron or de-getter impurities hence lower the performance, leading to a poisoning of the intra-grain regions.

Keywords

gettering / grain boundaries / hydrogen / impurities / oxidation / passivation / solar cell

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Moonyong KIM, Phillip HAMER, Hongzhao LI, David PAYNE, Stuart WENHAM, Malcolm ABBOTT, Brett HALLAM. Impact of thermal processes on multi-crystalline silicon. Front. Energy, 2017, 11(1): 32‒41 https://doi.org/10.1007/s11708-016-0427-5

References

[1]
ITRPV. International Technology Roadmap for Photovoltaic. International Technology Roadmap for Photovoltaic Results 2015, 7th edition. Frankfurt. 2016, http:// www.itrpv.net
[2]
Trina Solar. Trina solar announces new efficiency record of 21.25% efficiency for multi-crystalline silicon solar cell. 2015, http://www.trinasolar.com/us/about-us/newinfo_978.html
[3]
Yang Y M, Yu A, Hsu B, Hsu W C, Yang A, Lan C W. Development of high-performance multicrystalline silicon for photovoltaic industry. Progress in Photovoltaics: Research and Applications, 2015, 23(3): 340–351
CrossRef Google scholar
[4]
Dupont Solamet. Newest generation front side silver paste delivers superior efficiency for p-type solar cells. 2015, http://www.dupont.com/products-and-services/solar-photovoltaic-materials/photovoltaic-metallization-pastes/products/solamet-frontside-silver-paste.html
[5]
Blakers A W, Wang A, Milne A M, Zhao J, Green M A. 22.8% efficient silicon solar cell. Applied Physics Letters, 1989, 55(13): 1363–1365
CrossRef Google scholar
[6]
Macdonald D, Cuevas A. The trade-off between phosphorus gettering and thermal degradation in multicrystalline silicon, 2000
[7]
Boudaden J, Monna R, Loghmarti M, Muller J C. Comparison of phosphorus gettering for different multicrystalline silicon. Solar Energy Materials and Solar Cells, 2002, 72(1): 381–387
CrossRef Google scholar
[8]
Périchaud I. Gettering of impurities in solar silicon. Solar Energy Materials and Solar Cells, 2002, 72(1-4): 315–326
CrossRef Google scholar
[9]
Bentzen A, Holt A. Overview of phosphorus diffusion and gettering in multicrystalline silicon. Materials Science and Engineering B, 2009, 159–160(11): 228–234
CrossRef Google scholar
[10]
Buonassisi T, Istratov A A, Pickett M D, Heuer M, Kalejs J P, Hahn G, Marcus M A, Lai B, Cai Z, Heald S M, Ciszek T F, Clark R F, Cunningham D W, Gabor A M, Jonczyk R, Narayanan S, Sauar E, Weber E R. Chemical natures and distributions of metal impurities in multicrystalline. Progress in Photovoltaics: Research and Applications, 2006, 14(6): 513–531
CrossRef Google scholar
[11]
Bentzen A, Holt A, Kopecek R, Stokkan G, Christensen J S, Svensson B G. Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing. Journal of Applied Physics, 2006, 99(9): 093509
CrossRef Google scholar
[12]
Fenning D P, Hofstetter J, Bertoni M I, Coletti G, Lai B, del Cañizo C, Buonassisi T. Precipitated iron: a limit on gettering efficacy in multicrystalline silicon. Journal of Applied Physics, 2013, 113(4): 044521
CrossRef Google scholar
[13]
Liu A, Sun C, Macdonald D. Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing. Journal of Applied Physics, 2014, 116(19): 194902
CrossRef Google scholar
[14]
Lelièvre J F, Hofstetter J, Peral A, Hoces I, Recart F, del Cañizo C. Dissolution and gettering of iron during contact co-firing. Energy Procedia, 2011, 8: 257–262
CrossRef Google scholar
[15]
Tan J, MacDonald D, Bennett N, Kong D, Cuevas A, Romijn I. Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters. Applied Physics Letters, 2007, 91(4): 043505
CrossRef Google scholar
[16]
Sinton R A, Cuevas A. Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data. Applied Physics Letters, 1996, 69(17): 2510–2512
CrossRef Google scholar
[17]
Richter A, Werner F, Cuevas A, Schmidt J, Glunz S W. Improved parameterization of Auger recombination in silicon. Energy Procedia, 2012, 27: 88–94
CrossRef Google scholar
[18]
Kane D E, Swanson R M. Measurement of the emitter saturation current by a contactless photoconductivity decay method. The 18th IEEE Photovoltaic Specialists Conference,1985: 578–58
[19]
Trupke T, Bardos R A, Schubert M C, Warta W. Photoluminescence imaging of silicon wafers. Applied Physics Letters, 2006, 89(4): 044107
CrossRef Google scholar
[20]
Teal A, Juhl M. Correcting the inherent distortion in luminescence images of silicon solar cells. 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015: 1–5
[21]
Mimura M, Ishikawa S, Saitoh T. Effect of thermal annealing on minority-carrier lifetimes for multicrystalline silicon wafers. Technical Digest of the 11th Photovoltaic Scientists and Engineers Conference, 1999: 357–358
[22]
Xu H B, Hong R J, Ai B, Zhuang L, Shen H. Application of phosphorus diffusion gettering process on upgraded metallurgical grade Si wafers and solar cells. Applied Energy, 2010, 87(11): 3425–3430
CrossRef Google scholar
[23]
Chen J, Yang D, Xi Z, Sekiguchi T. Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon : influence of GB character and impurity contamination. Physica B, Condensed Matter, 2005, 364(1-4): 162–169
CrossRef Google scholar
[24]
Hallam B J, Hamer P G, Wang S, Song L, Nampalli N, Abbott M D, Chan C E, Lu D, Wenham A M, Mai L, Borojevic N, Li A, Chen D, Kim M Y, Azmi A, Wenham S. Advanced hydrogenation of dislocation clusters and boron-oxygen defects in silicon solar cells. Energy Procedia, 2015, 77: 799–809
CrossRef Google scholar
[25]
Geerligs L J, Komatsu Y, Röver I, Wambach K, Yamaga I, Saitoh T. Precipitates and hydrogen passivation at crystal defects in n- and p-type multicrystalline silicon. Journal of Applied Physics, 2007, 102(9): 093702
CrossRef Google scholar

Acknowledgments

The authors would like to acknowledge Kyung Kim, Ly Mai and MAiA processing team who assisted with wafer processing. This Program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA) and the Australian Center for Advanced Photovoltaics (ACAP). The views expressed herein are not necessarily the views of the Australian Government, and the Australian Government does not accept responsibility for any information or advice contained herein. The authors would like to thank the commercial partners of the ARENA 1-A060 project, and the UK Institution of Engineering and Technology (IET) for their funding support for this work through the A.F. Harvey Engineering Prize.

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2016 Higher Education Press and Springer-Verlag Berlin Heidelberg
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