Preparation and optimization of freestanding GaN using low-temperature GaN layer

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Front. Mater. Sci. ›› 2019, Vol. 13 ›› Issue (3) : 314-322. DOI: 10.1007/s11706-019-0466-z
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Preparation and optimization of freestanding GaN using low-temperature GaN layer

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{{article.zuoZheEn_L}}. {{article.titleEn}}. Front. Mater. Sci., 2019, 13(3): 314‒322 https://doi.org/10.1007/s11706-019-0466-z

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