High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

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Front. Optoelectron. ›› 2012, Vol. 5 ›› Issue (2) : 127-132. DOI: 10.1007/s12200-012-0256-z
RESEARCH ARTICLE

High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

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{{article.zuoZheEn_L}}. {{article.titleEn}}. Front Optoelec, 2012, 5(2): 127‒132 https://doi.org/10.1007/s12200-012-0256-z

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