Unity quantum yield of InP/ZnSe/ZnS quantum dots enabled by Zn halide-derived hybrid shelling approach

Abstract

Environment-benign indium phosphide (InP) quantum dots (QDs) show great promise as visible emitters for next-generation display applications, where bright and narrow emissivity of QDs should be required toward high-efficiency, high-color reproducibility. The photoluminescence (PL) performance of InP QDs has been consistently, markedly improved, particularly owing to the exquisite synthetic control over core size homogeneity and core/shell heterostructural variation. To date, synthesis of most high-quality InP QDs has been implemented by using zinc (Zn) carboxylate as a shell precursor that unavoidably entails the formation of surface oxide on InP core. Herein, we demonstrate synthesis of superbly bright, color-pure green InP/ZnSe/ZnS QDs by exploring an innovative hybrid Zn shelling approach, where Zn halide (ZnX₂, X = Cl, Br, I) and Zn oleate are co-used as shell precursors. In the hybrid Zn shelling process, the type of ZnX₂ is found to affect the growth outcomes of ZnSe inner shell and consequent optical properties of the resulting heterostructured InP QDs. Enabled by not only the near-complete removal of the oxide layer on InP core surface through the hybrid Zn shelling process but the controlled growth rate of ZnSe inner shell, green InP/ZnSe/ZnS QDs achieve a record quantum yield (QY) up to unity along with a highly sharp linewidth of 32 nm upon growth of an optimal ZnSe shell thickness. This work affords an effective means to synthesize high-quality heterostructured InP QDs with superb emissive properties.

Keywords

InP quantum dots / hybrid zinc shelling process / ZnSe inner shell / quantum yield

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