Artificial optoelectronic synapses based on Ga2O3 metal–semiconductor–metal solar-blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing
Huazhen Sun , Bingjie Ye , Mei Ge , Biao Gong , Leyang Qian , Irina N. Parkhomenko , Fadei F. Komarov , Yu Liu , Guofeng Yang
Responsive Materials ›› 2025, Vol. 3 ›› Issue (2) : e20240038
Research on optoelectronic synapses that can integrate both detection and processing functions is essential for the development of efficient neuromorphic computing. Here, we experimentally demonstrated an Ga2O3-based metal–semiconductor–metal (MSM) solar-blind ultraviolet (UV) photodetector (PD) with asymmetric interdigital electrodes. The Ga2O3 PD exhibits a responsivity of 732 A/W under a forward bias of 6 V. The tunable conductance properties of PDs provide a novel approach to synaptic performance. The proposed PDs as artificial synapse realized several essential synaptic function, including excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation, the transition from short-term memory to long-term memory, and learning experience behaviors successfully. At a reverse bias, an ultra-low energy consumption of 140 fJ was achieved. In addition, the optoelectronic synapses demonstrated a recognition accuracy of over 95% in the MNIST handwritten number recognition task. These results suggest that Ga2O3 MSM solar-blind UV PDs have high potential for efficient optoelectronic neuromorphic computing applications.
asymmetric electrodes / Ga2O3 / neuromorphic computing / optoelectronic synapse / solar-blind UV PDs
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2025 The Author(s). Responsive Materials published by John Wiley & Sons Australia, Ltd on behalf of Southeast University.
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