Topological insulator modified nickel oxide nanoflowers for low-temperature hydrogen sulfide gas sensing

Abstract

Developing low-cost, highly responsive low-temperature H₂S sensors is critical due to rising air pollution, as well as the high energy consumption and safety risks associated with conventional semiconductor sensors. Non-stoichiometric NiO_x offers enhanced carrier concentration and active sites via nickel vacancies, thereby improving low-temperature sensitivity. Composite sensors were fabricated by incorporating various mass fractions of the topological insulator Bi₂Te₃ into NiO_x. The 10% Bi₂Te₃@NiO_x sensor delivered the best performance [11.81 response to 10 ppm H₂S at 90 °C, 30% relative humidity (RH)], surpassing most reported H₂S sensors. Its sensitivity is attributed to enhanced carrier mobility and Bi₂Te₃ Dirac point shift upon H₂S physisorption. With excellent H₂S selectivity and stability, this composite offers a safer, energy-efficient, low-temperature alternative to high-temperature sensors.

Keywords

Gas sensor / nickel oxide / topological insulator / bismuth telluride / carrier mobility / Dirac point

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